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| MJ15015 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a metal envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time CONDITIONS VBE = 0V TYP Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A IC=4A,IB1=-IB2=0.4A,VCC=30V 1.5 MAX 200 120 15 180 1.5 2.0 6.0 UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 200 120 5 15 7 180 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IC = 4.5A; IB = 1.6A IC = 100mA; VCE = 5V IC = 0.1A; VCE = 5V VCB = 10V IC=4A,IB1=-IB2=0.4A,VCC=30V IC=4A,IB1=-IB2=0.4A,VCC=30V IC=4A,IB1=-IB2=0.4A,VCC=30V TYP 120 30 3 MAX 0.2 0.2 1.5 150 6004.5 3.0 6.0 UNIT mA mA V V MHz pF us us us Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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