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| Bulletin I0143J 01/01 S1231 PHASE CONTROL THYRISTORS Junction Size Wafer Size VRRM / VDRM Class Passivation Process Reference IR Packaged Part : Square 180 mils - IR180SH12H/ S1231 : 4" : 1200 V : Glassivated MESA : n. a. Major Ratings and Characteristics Parameters VTM Typical On-state Voltage Units 1.3 V 1200 V 5 to 45 mA 1.9 V 5 to 150 mA 400 mA Test Conditions TJ = 25C, I T = 25 A TJ = 25C, I RRM = 300 A (1) VRRM / VDRM Reverse Breakdown Voltage IGT VGT IH IL Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 15 KA) Cr - Ni - Ag (1 KA - 4 KA - 15 KA) 180 x 180 mils (see drawing) 100 mm, with std. < 100 > flat 350 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 S1231 Bulletin I0143J 01/01 Outline Table All dimensions are in millimeters Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters 2 www.irf.com |
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