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Bulletin I0140J 01/01 S1234 PHASE CONTROL THYRISTORS Junction Size Wafer Size VRRM / VDRM Class Passivation Process Reference IR Packaged Part : : : : : Square 480 mils - IR480SG12H/ S1234 4" 600 to 1200 V Glassivated MESA T90RIA Series Major Ratings and Characteristics Parameters VTM Typical On-state Voltage Units 1.2 V 600 to 1200 V 10 to 110 mA 1.9 V 10 to 200 mA 400 mA Test Conditions TJ = 25C, I T = 25 A TJ = 25C, I RRM = 100 A (1) VRRM / VDRM Reverse Breakdown Voltage IGT VGT IH IL Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 15 KA) Cr - Ni - Ag (1 KA - 4 KA - 15 KA) 480 x 480 mils (see drawing) 100 mm, with std. <100> flat 370 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination S1234 Bulletin I0140J 01/01 Outline Table All dimensions are in millimeters Wafer Layout TOP VIEW N 37 Basic Cells All dimensions are in micron All dimensions are in millimiters 2 www.irf.com |
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