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10200CT LVC04 BU9718KV R3256 BAW56WT VCO190 SK343 40N03
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  Datasheet File OCR Text:
 Bulletin I0140J 01/01
S1234
PHASE CONTROL THYRISTORS
Junction Size Wafer Size VRRM / VDRM Class Passivation Process Reference IR Packaged Part : : : : :
Square 480 mils - IR480SG12H/ S1234 4" 600 to 1200 V Glassivated MESA T90RIA Series
Major Ratings and Characteristics
Parameters
VTM Typical On-state Voltage
Units
1.2 V 600 to 1200 V 10 to 110 mA 1.9 V 10 to 200 mA 400 mA
Test Conditions
TJ = 25C, I T = 25 A TJ = 25C, I RRM = 100 A
(1)
VRRM / VDRM Reverse Breakdown Voltage IGT VGT IH IL Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current
TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 15 KA) Cr - Ni - Ag (1 KA - 4 KA - 15 KA) 480 x 480 mils (see drawing) 100 mm, with std. <100> flat 370 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination
S1234
Bulletin I0140J 01/01
Outline Table
All dimensions are in millimeters
Wafer Layout
TOP VIEW N 37 Basic Cells
All dimensions are in micron
All dimensions are in millimiters
2
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