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| 2SC4196 Silicon NPN Epitaxial Application UHF Local oscillator Outline 2SC4196 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 15 3 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Note: Marking is "QI-". I EBO VCE(sat) hFE Cob fT VOSC Min 25 -- -- -- -- 50 -- 1.8 -- Typ -- -- -- -- -- -- 0.7 2.4 200 Max -- 0.3 10 1.0 0.3 180 1.0 -- -- pF GHz mV Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 5 mA, f = 930 MHz 2 2SC4196 3 2SC4196 4 2SC4196 S Parameters (Emitter Common) Test condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP), ZO = 50 5 2SC4196 6 2SC4196 S Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.718 0.549 0.439 0.381 0.351 0.340 0.337 0.337 0.343 0.359 ANG. -44.8 -78.8 -102.0 -120.8 -135.5 -148.2 -157.8 -165.2 -173.1 -177.9 S21 MAG. 12.498 9.123 6.788 5.348 4.396 3.732 3.240 2.875 2.575 2.355 ANG. 144.9 122.0 108.4 99.3 92.4 86.7 81.7 77.3 73.4 70.0 S12 MAG. 0.026 0.042 0.051 0.060 0.068 0.076 0.085 0.094 0.103 0.112 ANG. 68.8 59.3 57.6 58.5 60.6 62.5 64.3 66.0 67.3 68.4 S22 MAG. 0.895 0.756 0.671 0.626 0.600 0.582 0.569 0.558 0.547 0.538 ANG. -14.6 -20.3 -21.3 -21.5 -21.8 -22.5 -23.3 -24.4 -25.8 -27.2 Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.553 0.401 0.337 0.314 0.313 0.314 0.327 0.335 0.349 0.354 ANG. -65.2 -103.4 -127.4 -143.9 -155.7 -165.5 -172.2 -177.7 176.8 172.8 S21 MAG. 17.540 11.066 7.723 5.939 4.816 4.052 3.496 3.090 2.753 2.515 ANG. 133.2 111.3 99.9 92.5 86.7 81.8 77.6 73.8 70.1 67.0 S12 MAG. 0.022 0.033 0.043 0.052 0.063 0.073 0.083 0.093 0.103 0.113 ANG. 64.8 61.3 63.9 66.3 68.6 70.1 71.4 72.4 73.0 74.0 S22 MAG. 0.809 0.659 0.598 0.570 0.555 0.545 0.536 0.530 0.523 0.516 ANG. -18.0 -20.0 -18.6 -18.1 -18.2 -18.9 -19.9 -21.0 -22.4 -24.0 7 2SC4196 Y Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 3.035 6.463 10.768 15.089 18.776 22.098 24.568 26.291 28.112 29.685 IMAG. 5.491 10.003 12.356 13.186 12.837 11.913 10.731 9.416 7.683 6.751 Yfe (mS) REAL 152.256 131.145 103.025 77.334 55.039 37.290 22.802 11.686 2.225 -3.931 IMAG. -40.168 -71.318 -90.187 -98.666 -99.977 -98.247 -93.799 -88.266 -82.972 -78.720 Yre (mS) REAL -0.005 -0.015 -0.036 -0.065 -0.090 -0.128 -0.163 -0.193 -0.260 -0.291 IMAG. -0.334 -0.679 -1.034 -1.397 -1.767 -2.134 -2.515 -2.890 -3.305 -3.746 Yoe (mS) REAL 0.048 0.100 0.191 0.232 0.270 0.347 0.417 0.516 0.614 0.629 IMAG. 0.613 1.238 1.804 2.386 2.947 3.555 4.133 4.703 5.354 5.908 Test Condition VCE = 5 V, IC = 10 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 5.903 11.583 16.546 20.055 22.491 24.417 26.086 27.193 28.543 28.955 IMAG. 7.347 10.820 10.993 10.038 8.943 7.556 6.620 5.569 4.340 3.253 Yfe (mS) REAL 243.307 168.225 103.210 61.965 35.421 16.762 5.096 -3.874 -11.095 -15.953 IMAG. -103.091 -150.806 -155.623 -145.393 -131.365 -118.513 -107.291 -97.359 -88.952 -81.466 Yre (mS) REAL -0.008 -0.022 -0.045 -0.074 -0.093 -0.133 -0.155 -0.185 -0.248 -0.270 IMAG. -0.338 -0.682 -1.041 -1.387 -1.766 -2.138 -2.531 -2.923 -3.349 -3.737 Yoe (mS) REAL 0.026 0.128 0.216 0.320 0.316 0.378 0.424 0.469 0.563 0.650 IMAG. 0.591 1.254 1.797 2.394 2.917 3.544 4.086 4.659 5.307 5.861 8 2SC4196 VOSC Test Circuit 9 2SC4196 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10 |
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