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Rev 2: Aug 2004
AO7403, AO7403L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. AO7403L (Green Poduct) is offered in a lead-free package.
Features
VDS (V) = -20V ID = -0.7A RDS(ON) < 470m (VGS = -4.5V) RDS(ON) < 625m (VGS = -2.5V) RDS(ON) < 900m (VGS = -1.8V)
SC-70 (SOT-323) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG
Maximum -20 8 -0.7 -0.5 -3 0.35 0.22 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 300 350 280
Max 360 425 320
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7403, AO7403L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.7A TJ=125C VGS=-2.5V, ID=-0.6A VGS=-1.8V, ID=-0.5A VDS=-5V, ID=-0.7A -0.5 -3 388 542 519 666 1.7 -0.86 470 660 625 900 -1 -0.4 -0.6 Min -20 -1 -5 10 -0.9 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
114 17 14 12 1.44 0.14 0.35 6.5 6.5 18.2 5.5 10 3
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, ID=-0.7A
VGS=-4.5V, VDS=-10V, RL=14.3, RGEN=3
IF=-0.7A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-0.7A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO7403, AO7403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6 -8V -6V -4.5V -4V 4 -ID (A) -3V 2 -2.5V VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 1000 Normalized On-Resistance 900 800 RDS(ON) (m) 700 600 500 400 300 0 1 2 3 4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 900 800 700 -IS (A) 600 500 25C 400 300 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics ID=-0.7A 1.0E+00 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 RDS(ON) (m) VGS=-4.5V VGS=-2.5V VGS=-1.8V 1.6 1 -3.5V -ID(A) 2 3 125C 4 25C VDS=-5V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics
VGS=-1.8V ID=-0.5A
1.4 VGS=-2.5V ID=-0.6A 1.2 VGS=-4.5V ID=-0.7A 1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
125C
Alpha & Omega Semiconductor, Ltd.
AO7403, AO7403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0.0 0.5 1.0 1.5 2.0 -Qg (nC) Figure 7: Gate-Charge Characteristics 200 VDS=-10V ID=-0.7A Capacitance (pF) 150 Ciss
100 Coss 50 Crss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.00 TJ(Max)=150C TA=25C 10.00 Power (W) -ID (Amps) RDS(ON) limited 1.00 0.1 1s 10s 0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100s 1ms 10ms 10s
14 12 10 8 6 4 2 0 0.001 TJ(Max)=150C TA=25C
0.10
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Document No.
Version
Title
PD-00128
rev C
AO7403 Marking Description
SC-70(3L) PACKAGE MARKING DESCRIPTION
LT
PNW
PNW
Standard product
Green product
NOTE: P - Product number code N - Assembly&Foundry location code W - Year and Week code LT - Assembly lot code.
PART NO. DESCRIPTION CODE (P&N) 3&N Standard product AO7403 3&N AO7403L Green product
LT
Rev. A
NOTE 1.ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS 4.DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM .ie:REVERSE TRIM/FORM. 5. DIMENSION L IS MEASURED IN GAUGE PLANE 6. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
SYMBOLS
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
MIN A A1 A2 b c D E e e1 E1 L 0.00 0.7 0.15 0.08 1.85 1.80 1.1 0.26 0
RECOMMENDATION OF LAND PATTERN
NOM --- --- 0.9 --- --- 2.10 2.30 0.65 BSC 1.30 BSC 1.30 0.36 4
MAX 1.10 0.10 1.00 0.30 0.22 2.15 2.40
MIN
0.00 0.028 0.006 0.003 0.073 0.071
1.4 0.46 8
0.043 0.010 0
NOM --- --- 0.035 --- --- 0.083 0.091 0.026 BSC 0.051 BSC 0.051 0.014 4
MAX 0.043 0.004 0.039 0.012 0.009 0.085 0.094
0.055 0.018 8
UNIT: mm
SC-70 3L Tape and Reel Data
SC-70 3L Carrier Tape
SC-70 3L Reel
SC-70 3L Tape
Leader / Trailer & Orientation

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