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SI4542DY
January 2001
SI4542DY
30V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
* Q1: N-Channel 6 A, 30 V RDS(on) = 28 m @ VGS = 10V RDS(on) = 35 m @ VGS = 4.5V * Q2: P-Channel -6 A, -30 V RDS(on) = 32 m @ VGS = -10V RDS(on) = 45 m @ VGS = -4.5V
Applications
* DC/DC converter * Power management
D1 D
D1 D
DD2 D2 D
5 6
Q2
4 3
Q1
SO-8
Pin 1 SO-8
G1 S1 S
G2 S2 G
7 8
2 1
S
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25C unless otherwise noted
Parameter
Q1
30
(Note 1a)
Q2
-30 20 -6 -20 2 1.6 1.2 1 -55 to +175
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
20 6 20
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking 4542 Device SI4542DY Reel Size 13" Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor International
SI4542DY Rev A
SI4542DY
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V
Type
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
Min Typ Max Units
30 -30 23 -21 1 -1 +100 +100 1 -1 1.5 -1.7 -4 4 19 32 25 21 29 30 3 -3 V mV/C A nA
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
ID(on) gFS
VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A Gate Threshold Voltage ID = 250 A, Referenced to 25C Temperature Coefficient ID = -250 A, Referenced to 25C Static Drain-Source VGS = 10 V, ID = 6 A On-Resistance VGS = 10 V, ID = 6 A, TJ = 125C VGS = 4.5 V, ID = 5 A VGS = -10 V, ID = -6 A VGS = -10 V, ID = -6 A, TJ = 125C VGS = -4.5 V, ID = -5 A On-State Drain Current VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V Forward Transconductance VDS = 15 V, ID = 6 A VDS = -10 V, ID = -6 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -15 V, VGS = 0 V, f = 1.0 MHz
Gate Threshold Voltage
V mV/C
Q2
28 48 35 32 51 45
m
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
20 -20 18 16 830 1540 185 400 80 170
A S
Dynamic Characteristics
Ciss Coss Crss pF pF pF
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25C unless otherwise noted
Test Conditions
(Note 2)
Type Min Typ
Max Units
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Q1 VDS = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDS = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Q1 VDS = 15 V, ID = 7.5 A, VGS = 5 V Q2 VDS = -10 V, ID = -6 A, VGS = -5V
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
6 13 10 22 18 47 5 18 9 15 2.8 4 3.1 5
12 24 18 35 29 75 12 30 13 20
ns ns ns ns nC nC nC
SI4542DY Rev A
SI4542DY
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = -1.3 A (Note 2) Q1 Q2 Q1 Q2 0.7 -0.7 1.3 -1.3 1.2 -1.2 A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 78C/W when mounted on a 0.5 in2 pad of 2 oz copper
b) 125C/W when 2 mounted on a .02 in pad of 2 oz copper
c) 135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
SI4542DY Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H1

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