 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Target data sheet SPUX3N60S5 SPDX3N60S5 Cool MOSTM Power Transistor * Worldwide best RDS(on) in D-Pack * N-Channel * Enhancement mode * Ultra low gate charge * Avalanche rated * dv/dt rated * 150C operating temperature Type SPUX3N60S5 SPDX3N60S5 1 G 2 D 3 S VDS 600 V ID 7.3 A RDS(on) 600 m Marking X3N60S5 Package P-TO251-3-1 P-TO252 Ordering Code - Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Drain source voltage Continuous drain current Symbol Value 600 7.3 4.6 Unit V A VDSS ID TC = 25 C TC = 100 C Pulsed drain current ID puls EAS IAR EAR dv/dt 14.6 230 tbd tbd 6 mJ A mJ KV/s TC = 25 C Avalanche energy, single pulse ID = 7.3 A, VDD = 50 V, RGS = 25 Avalanche current (periodic, limited by jmax) T Avalanche energy (10 kHz, limited by jmax) T Reverse diode d v/dt IS = 7.3 A, VDS VGS Ptot Tj Tstg 20 83 -55 ...+150 -55 ... +150 55/150/56 V W C Semiconductor Group 1 04 / 1998 Target data sheet SPUX3N60S5 SPDX3N60S5 Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient (Leaded and through-hole packages) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 100 max. 1.5 - Unit RthJC RthJA RthJA - K/W - tbd tbd - V(BR)DSS VGS(th) 600 - - V VGS = 0 V, ID = 0.25 mA Gate threshold voltage,VGS = V DS ID = 350 A, T j = 25 C 3.5 tbd 4.5 0.5 10 tbd 5.5 A 0.1 1 tbd 100 600 nA m ID = 350 A, T j = 150 C Zero gate voltage drain current,V DS=V DSS IDSS VGS = 0 V, Tj = -40 C VGS = 0 V, Tj = 25 C VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) - VGS = 20 V, V DS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 4.6 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 04 / 1998 Target data sheet Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Characteristics Transconductance Symbol min. SPUX3N60S5 SPDX3N60S5 Values typ. tbd 980 630 33 tbd max. tbd tbd tbd tbd ns S pF Unit gfs Ciss Coss Crss td(on) - VDS 2 * ID * RDS(on)max , ID = 4.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 350 V, V GS = 10 V, I D = 7.3 A, RG = 12 Rise time tr - tbd - VDD = 350 V, V GS = 10 V, I D = 7.3 A, RG = 12 Turn-off delay time td(off) - tbd tbd VDD = 350 V, V GS = 10 V, I D = 7.3 A, RG = 12 Fall time tf - tbd - VDD = 350 V, V GS = 10 V, I D = 7.3 A, RG = 12 Semiconductor Group 3 04 / 1998 Target data sheet Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Gate Charge Characteristics Gate-source charge Symbol min. SPUX3N60S5 SPDX3N60S5 Values typ. tbd tbd 32 max. tbd nC Unit Qgs Qgd QG - ID = 7.3 A, VDD = 400 V Gate-drain charge ID = 7.3 A, VDD = 400 V Total gate charge VDD = 400 V, ID = 7.3 A, VGS = 0 to 10 V Reverse Diode Continuous source current IS ISM VSD trr Q rr - tbd tbd tbd 7.3 14.6 1.2 - A TC = 25 C Pulsed source current TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, IF = 7.3 A Reverse recovery time VR = 100 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS , diF/dt = 100 A/s Semiconductor Group 4 04 / 1998 Target data sheet SPUX3N60S5 SPDX3N60S5 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or ii d i d/ fh lif f h f il i i bl h h h lh f h Semiconductor Group 5 04 / 1998 |
Price & Availability of SPDX3N60S5
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |