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Rev 1: June 2004
AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package.
Features
VDS (V) = 30V ID = 18A RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 7.5m (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 20 18 15 80 3 2.1 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 80 4.7 6.5 6.2 82 0.7 1 4.5 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 638 355 0.45 103 VGS=10V, VDS=15V, ID=18A 48 18 15 12 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/s 8 51.5 8.8 33.5 22 5.5 8 7.5 1.8 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 10V 50 3.5V 40 ID (A) 30 20 10 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7.0 Normalized On-Resistance 6.5 VGS=4.5V 6.0 RDS(ON) (m) 5.5 5.0 4.5 4.0 3.5 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 1.6 ID=18A 1.4 VGS=10V 1.2 VGS=4.5V ID(A) 40 125C 30 20 25C 10 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 3.0V 4.5V 50 VDS=5V 60
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
16
1.0E+02 1.0E+01
12 ID=18A RDS(ON) (m) 8 125C IS (A)
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125C
25C
4
25C
0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=18A Capacitance (pF) 8000 Ciss
6000
4000
2000
Crss
Coss
0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics
100.0
RDS(ON) limited 10ms 0.1s 1s 10s DC TJ(Max)=150C TA=25C
100s 1ms
10s
100 80 Power (W) 60 40 20 0 0.001
TJ(Max)=150C TA=25C
ID (Amps)
10.0
1.0
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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