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| HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features * * * * For Automotive Application ( at Type Code "J ") Low on-resistance Capable of 4 V gate drive High density mounting Outline HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Unit Pch -60 20 -3.5 -28 -3.5 V V A A A VDSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note1 60 20 5 40 5 -- 5 -- -3.5 -- 1.05 2 3 150 -55 to +150 -- A -- mJ W W C C EAR -- 2.14 2 3 150 -55 to +150 PW 10s, duty cycle 1 % 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Value at Tch=25C, Rg 50 2 HAT3008R/HAT3008RJ Electrical Characteristics (Ta = 25C) * N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage HAT3008R drain current HAT3008RJ Symbol V(BR)DSS V(BR)GSS I GSS I DSS I DSS I DSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Min 60 20 -- -- -- -- -- 1.2 -- -- 6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.043 0.056 9 520 270 100 11 40 110 80 0.84 40 Max -- -- 10 1 0.1 -- 10 2.2 0.058 0.084 -- -- -- -- -- -- -- -- 1.1 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns IF = 5A, VGS = 0 Note4 IF =5A, VGS = 0 diF/ dt =50A/s VDS =48V, VGS = 0 Ta=125C VDS = 10V, I D = 1mA I D = 3A, VGS = 10V Note4 I D = 3A, VGS = 4V Note4 I D = 3A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS =10V, ID = 3A VDD 30V Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60V, VGS = 0 Zero gate voltage HAT3008R drain current HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 5. Pulse test t rr 3 HAT3008R/HAT3008RJ * P Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage HAT3008R drain current HAT3008RJ Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS I DSS I DSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr -60 20 -- -- -- -- -- -1.2 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 0.12 0.16 4.5 600 290 75 11 30 100 55 -0.98 70 Max -- -- 10 -1 -0.1 -- -10 -2.2 0.15 0.23 -- -- -- -- -- -- -- -- -1.28 -- Unit V V A A A A A V S pF pF pF ns ns ns ns V ns IF = -3.5A, VGS = 0 Note4 IF = -3.5A, VGS = 0 diF/ dt =50A/s VDS =- 48V, VGS = 0 Ta=125C VDS = -10V, I D = -1mA I D = -2A, VGS = -10V Note4 I D = -2A, VGS = - 4V Note4 I D = -2A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -2A VDD -30V Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = -60V, VGS = 0 Zero gate voltage HAT3008R drain current HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test 4 HAT3008R/HAT3008RJ Main Characteristics ( N Channel ) 5 HAT3008R/HAT3008RJ 6 HAT3008R/HAT3008RJ 7 HAT3008R/HAT3008RJ Main Characteristics ( P Channel ) 8 HAT3008R/HAT3008RJ 9 HAT3008R/HAT3008RJ 10 HAT3008R/HAT3008RJ 11 HAT3008R/HAT3008RJ 12 HAT3008R/HAT3008RJ 13 HAT3008R/HAT3008RJ Package Dimensions Unit: mm 14 HAT3008R/HAT3008RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 15 |
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