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New
FeRAM Embedded IC MN63Y1005 for Contactless IC card and Tag
I Overview
MN63Y1005 is a nonvolatile ferroelectric random access memory (FeRAM) embedded IC for contactless IC card and tag. The IC is powered by radio waves from a read/write unit and for incorporating nonvolatile ferroelectric RAM, the IC can retain information even when power is lost. And it realizes high reliability with the endurance such as read/write cycles and data retention period.
A A O B O O A A
I Features
A
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G FeRAM embedded A * Nonvolatile * High speed read/write * Low power consumption Crystal model of ferroelectric RAM G Batteryless, wireless, contactless This IC is powered by radio waves at 13.56 MHz sent from a read/write unit, through the externally attached coil antenna to the IC. Embedding of nonvolatile FeRAM does not require batteries. * Note) 13.56 MHz-international standard for contactless IC cards G Large memory configuration 1 024 bits of user memory area are organized into 13 areas. G Security * User ID 32 bits are allocated to the user ID area. The user ID can be set by a user and is unique to each card. The user ID cannot be changed once it is locked by the lock function provided. Once locked, the lock cannot be unlocked. * User area User data are protected by a separate lock function provided for each of the 13 areas. Once locked, 10 of 13 locks cannot be unlocked. * Password A password is necessary for memory access. G High reliability * Endurance 1 billion read/write cycles * Data retention 10 years13
I Applications
G Contactless IC card / Tag
I Block diagram (example)
FeRAM (1 120 bit) Control Circuit Receiving Circuit Transmission Circuit Coil
Single Chip LSI
Power Circuit
The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements.
Semiconductor Company, Matsushita Electronics Corporation
1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan
M00364BE
Tel. (075) 951-8151
http://www.panasonic.co.jp/semicon/
New publication, effective from May 18, 2001
I MN63Y1005 Specifications
Item Nonvolatile memory Endurance Operating frequency Modulation Protocol Maximum read/write distance Data retention period Transfer rate Bit coding Operating temperature Security Error checking Communication method Operating voltage range Resonant capacitor Card to reader Reader to card User area System area 96 bits FeRAM 1 billion read/write cycles 13.56 MHz 847.5 kHz BPSK 10 % ASK Matsushita proprietary protocol 5 cm * 10 years 212 kbps NRZ-L -10C to 70C ID, Password 8 bits CRC /17 bits data Half duplex 3.5 V to 5.0 V Not included Specifications 1 024 bits FeRAM
Note) * : Depending on operating environment-power of a reader/writer, antenna size, etc.

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