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NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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30 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 200 mW
COLLECTOR 3 1 BASE 2 EMITTER
* This is a Pb-Free Device
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max -30 -50 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc A A
3 1 2 SOT-23 (TO-236) CASE 318 STYLE 6
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 310 2.5 RJA (Note 1) PD (Note 2) 403 710 5.7 RJA (Note 2) PDsingle (Note 3) TJ, Tstg 176 575 -55 to +150 Unit mW mW/C C/W mW mW/C C/W mW C
1
DEVICE MARKING
3
VS4
2
VS4 = Specific Device Code
ORDERING INFORMATION
Device NSS30100LT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 X 1.0 inch Pad. 3. Refer to Figure 8.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
June, 2005 - Rev. 0
Publication Order Number: NSS30100L/D
NSS30100LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -30 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 4) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) Base -Emitter Saturation Voltage (Note 4) (Figure 2) (IC = -1.0 A, IB = -0.1 A) Base -Emitter Turn-on Voltage (Note 4) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (f = 1.0 MHz) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. hFE 100 100 80 40 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cobo - - 15 pF -1.1 MHz -1.2 V -0.25 -0.30 -0.65 V - 300 - - V V(BR)CEO -30 V(BR)CBO -50 V(BR)EBO -5.0 ICBO - ICES - IEBO - -0.1 -0.1 mAdc -0.1 mAdc - mAdc - Vdc - Vdc Vdc Symbol Min Max Unit
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NSS30100LT1G
200 VCE = -2.0 V h FE , DC CURRENT GAIN 150 230 210 h FE , DC CURRENT GAIN 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 50 1.0 10 -55C 25C 125C VCE = -1.0 V
100
50
100
1000
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain versus Collector Current
1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5
Figure 2. DC Current Gain versus Collector Current
IC/IB = 10
IC/IB = 100
1000
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. "On" Voltages
Figure 4. Base Emitter Saturation Voltage versus Collector Current
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100
1000
VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS)
1.0
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage versus Collector Current
Figure 6. Collector Emitter Saturation Voltage versus Collector Current
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NSS30100LT1G
10 IC , COLLECTOR CURRENT (AMPS) SINGLE PULSE TEST AT Tamb = 25C 1s 100 ms 10 ms 1 ms 100 ms
1.0
2s 0.1
0.01
0.1
1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
100
Figure 7. Safe Operating Area
0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1
1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
Figure 8. Normalized Thermal Response
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NSS30100LT1G
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AH
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08.
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS30100LT1G
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NSS30100L/D

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