View PBSS5250X_347400.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor
Objective specification 2003 Jun 17
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
FEATURES * SOT89 (SC-62) package * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements. APPLICATIONS * Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting. * Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4250X. MARKING TYPE NUMBER PBSS5250X Note 1. * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China. *1L MARKING CODE(1)
1 Bottom view 2 3
handbook, halfpage
PBSS5250X
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. -50 -2 -5 160 UNIT V A A m
2 3 1
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
2003 Jun 17
2
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage continuous collector current (DC) peak collector current continuous base current (DC) total power dissipation Tamb 25 C note 1 note 2 Tj Tamb Tstg Notes junction temperature operating ambient temperature storage temperature - - - -65 -65 Tj max CONDITIONS open emitter open base open collector - - - - - - MIN.
PBSS5250X
MAX. -50 -50 -5 -2 -5 -0.5 550 1 150 +150 +150 V V V A A A
UNIT
mW W C C C
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 Rth-js Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. thermal resistance from junction to soldering point 225 125 16 K/W K/W K/W VALUE UNIT
2003 Jun 17
3
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = -50 V; IE = 0 VCB = -50 V; IE = 0; Tj = 150 C VCE = -50 V; VBE = 0 VEB = -5 V; IC = 0 VCE = -2 V IC = -0.1 A IC = -0.5 A IC = -1 A; note 1 IC = -2 A; note 1 VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -50 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -100 mA IC = -2 A; IB = -200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -2 A; IB = -200 mA; note 1 IC = -2 A; IB = -100 mA VCE = -2 V; IC = -1 A IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz 200 200 200 100 - - - - - - -1.1 100 - - - - - MIN.
PBSS5250X
MAX. -100 -50 -100 -100 - - - - -90 -250 -380 -320 160 -1.1 - - 35
UNIT nA A nA nA
mV mV mV mV m V V MHz pF
2003 Jun 17
4
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
PBSS5250X
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
wM
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 EIAJ SC-62
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003 Jun 17
5
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PBSS5250X
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jun 17
6
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
NOTES
PBSS5250X
2003 Jun 17
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2003
Jun 17
Document order number:
9397 750 11624

▲Up To Search▲

Price & Availability of PBSS5250X

	To Download PBSS5250X Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .