View PD10M440H_341524.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOSFET MODULE
FEATURES
* Dual MOS FETs Cascaded Circuit
Dual 85A 450V/500V
PD10M441H / PD10M440H
OUTLINE DRAWING
108.0 Dimension(mm)
* Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel * 300KHz High Speed Switching Possible
Circuit
TYPICAL APPLICATIONS
* Power Supply for the Communications and the Induction Heating
MAXMUM RATINGS Ratings
Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C.
Approximate Weight : 220g
Symbol
VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR
PD10M441H
450 +/ - 20 85 (Tc=25C) 60 (Tc=25C) 170 Tc=25C) 730 Tc=25C) -40 to +150 -40 to +125 2000 3.0 2.0
PD10M440H
500
Unit
V V A A W C C V N*m
Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition
Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=40A VGS=10V, ID=40A VDS=15V, ID=40A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=40A VGS= -5V, +10V RG= 7ohm
Min.
2.0 -
Typ.
3.1 75 3.5 65 13 2.2 0.45 140 110 300 50
Max.
1.0 4.0 4.0 1.0 85 3.9 -
Unit mA V A m-ohm V S nF nF nF ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=85A IS=85A, -dis/dt=100A/s
Min.
-
Typ.
100 0.15
Max.
60 170 2.0 -
Unit A A V ns C Unit C/W
THERMAL CHARACTERISTICS Characteristic Symbol
Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f)
Test Condition
MOS FET Diode Mounting surface flat, smooth, and greased
Min.
-
Typ.
-
Max.
0.171 1.2 0.1
PD10M44xH
108.0
120 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
12 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16
24
100 DRAIN CURRENT ID (A)
10
20
80
8
16
60
6
12
40
4
8
20
2
4
0
0
2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V)
12
0
0 -40
0 40 80 120 JUNCTION TEMPERATURE Tj ( )
160
30
16
10
24 CAPACITANCE C (nF)
GATE TO SOURCE VOLTAGE VGS (V)
5 SWITCHING TIME t ( s) 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 600 12
2
18
8
1
12
0.5
4
6
0.2
0
1
2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V)
100
0
0.1
2
5 10 20 50 100 SERIES GATE IMPEDANCE RG ( )
200
1000
180
500
REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 0.4 0.8 1.2 1.6 2.0 SOURCE TO DRAIN VOLTAGE VSD (V) 2 10 0 5 2 10 -1 5 2 10 -2 -5 10 2.4
500 SOURCE CURRENT IS (A) SWITCHING TIME t (ns)
150
200
200
120
100
100
90
50
50
60
20
20 10
30
10
2
5
10 20 50 DRAIN CURRENT ID (A)
100
200
0
5
0
100
200
300 400 -dis/dt (A/ s)
500
600
500 200 100 DRAIN CURRENT ID (A) 50 20 10
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
10 -4
10 -3 10 -2 10 -1 PULSE DURATION t (s)
10 0
10 1
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)]
2 10 0 5 2 10 -1 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1
5 2 1 0.5 1 2 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V)

▲Up To Search▲

Price & Availability of PD10M440H

	To Download PD10M440H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .