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RFM3N45, RFM3N50, RFP3N45, RFP3N50
Semiconductor
Data Sheet
October 1998
File Number 1384.2
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs
[ /Title () /Subject () /Autho () /Keyords ) /Cretor () /DOCI FO dfark
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
Features
* 3A, 450V and 500V * rDS(ON) = 3 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER RFM3N45 RFM3N50 RFP3N45 RFP3N50 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM3N45 RFM3N50 RFP3N45 RFP3N50
G
S
NOTE: When ordering, use the entire part number.
/Pageode /Useutines /DOCIEW dfark
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFM3N45 450 450 3 5 20 75 0.6 -55 to 150 300 260
RFM3N50 500 500 3 5 20 75 0.6 -55 to 150 300 260
RFP3N45 450 450 3 5 20 60 0.48 -55 to 150 300 260
RFP3N50 500 500 3 5 20 60 0.48 -55 to 150 300 260
UNITS V V A A V W W/oC
oC oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 450 500 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 7) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2.0 VDS = 25V, VGS = 0V, f = 1MHz 30 40 90 50 4.0 1 25 100 3 9.0 45 60 135 75 750 150 100 V V V A A nA V ns ns ns ns pF pF pF
oC/W oC/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage RFM3N45, RFP3N45 RFM3N50, RFP3N50 Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case RFM3N45, RFM3N50 RFP3N45, RFP3N50
IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC
VGS = 20V, VDS = 0V ID = 3A, VGS = 10V, (Figures 5, 6) ID = 3A, VGS = 10V VDD = 250V, ID 1.5A, RG = 50, VGS = 10V RL = 165 (Figures 10, 11, 12)
-
-
1.67 2.083
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1.5A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 800 MAX 1.4 UNITS V ns
2
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8
Unless Otherwise Specified
3.5 3 ID, DRAIN CURRENT (A) RFM3N45, RFM3N50 2.5 RFP3N45, RFP3N50 2 1.5 1 0.5 0 25
0.6 0.4
0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
100
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TC = 25oC (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) ID (MAX.) CONTINUOUS
4 VGS = 10V VGS = 6V 3 PULSE DURATION = 80s DUTY CYCLE 2% 2 VGS = 5V 1 VGS = 4V 100 1000 0 0 5 10 15 20 25
10
DC
1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1
OP
ER
AT IO
N
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
4
ON RESISTANCE ()
3 TC = -40oC 2 TC = 25oC TC = 125oC 1
rDS(ON), DRAIN TO SOURCE
VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2%
6 5 4 3
VGS = 10V PULSE DURATION = 80s DUTY CYCLE < 2% TC = 125oC
TC = 25oC 2 TC = -40oC 1 0
0
0
2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
0
1
2
3
4
5
6
7
ID, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
3
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves
2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 3A, VGS =10V PULSE DURATION = 80s 1.5 NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7
VDS = 10V ID = 250A
1
0.5
0 -50
0
50
100
150
200
0.6 -50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
VDS, DRAIN TO SOURCE VOLTAGE (V)
700 C, CAPACITANCE (pF) 600 500 400 300 200 100 0 0 10 20 30 40 COSS CRSS 50 60 CISS
VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
VDD = BVDSS 375
GATE SOURCE VOLTAGE RL = 167 IG(REF) = 0.45mA VGS = 10V 0.75BVDSS 0.50BVDSS 0.25BVDSS
8 VDD = BVDSS 6
250
4
125
2
DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0
70
80
90
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
4
VGS, GATE TO SOURCE VOLTAGE (V)
800
500
10
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Test Circuits and Waveforms
tON td(ON) tr RL VDS 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT
0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 13. GATE CHARGE TEST CIRCUIT
FIGURE 14. GATE CHARGE WAVEFORMS
5
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Semiconductor
Data Sheet
October 1998
File Number 1384.2
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs
[ /Title () /Subject () /Autho () /Keyords ) /Cretor () /DOCI FO dfark
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
Features
* 3A, 450V and 500V * rDS(ON) = 3 * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
D
Ordering Information
PART NUMBER RFM3N45 RFM3N50 RFP3N45 RFP3N50 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM3N45 RFM3N50 RFP3N45 RFP3N50
G
S
NOTE: When ordering, use the entire part number.
/Pageode /Useutines /DOCIEW dfark
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFM3N45 450 450 3 5 20 75 0.6 -55 to 150 300 260
RFM3N50 500 500 3 5 20 75 0.6 -55 to 150 300 260
RFP3N45 450 450 3 5 20 60 0.48 -55 to 150 300 260
RFP3N50 500 500 3 5 20 60 0.48 -55 to 150 300 260
UNITS V V A A V W W/oC
oC oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 450 500 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 7) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC 2.0 VDS = 25V, VGS = 0V, f = 1MHz 30 40 90 50 4.0 1 25 100 3 9.0 45 60 135 75 750 150 100 V V V A A nA V ns ns ns ns pF pF pF
oC/W oC/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage RFM3N45, RFP3N45 RFM3N50, RFP3N50 Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case RFM3N45, RFM3N50 RFP3N45, RFP3N50
IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC
VGS = 20V, VDS = 0V ID = 3A, VGS = 10V, (Figures 5, 6) ID = 3A, VGS = 10V VDD = 250V, ID 1.5A, RG = 50, VGS = 10V RL = 165 (Figures 10, 11, 12)
-
-
1.67 2.083
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1.5A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 800 MAX 1.4 UNITS V ns
2
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8
Unless Otherwise Specified
3.5 3 ID, DRAIN CURRENT (A) RFM3N45, RFM3N50 2.5 RFP3N45, RFP3N50 2 1.5 1 0.5 0 25
0.6 0.4
0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
100
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TC = 25oC (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) ID (MAX.) CONTINUOUS
4 VGS = 10V VGS = 6V 3 PULSE DURATION = 80s DUTY CYCLE 2% 2 VGS = 5V 1 VGS = 4V 100 1000 0 0 5 10 15 20 25
10
DC
1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1
OP
ER
AT IO
N
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
4
ON RESISTANCE ()
3 TC = -40oC 2 TC = 25oC TC = 125oC 1
rDS(ON), DRAIN TO SOURCE
VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2%
6 5 4 3
VGS = 10V PULSE DURATION = 80s DUTY CYCLE < 2% TC = 125oC
TC = 25oC 2 TC = -40oC 1 0
0
0
2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
0
1
2
3
4
5
6
7
ID, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
3
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Typical Performance Curves
2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 3A, VGS =10V PULSE DURATION = 80s 1.5 NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7
VDS = 10V ID = 250A
1
0.5
0 -50
0
50
100
150
200
0.6 -50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
VDS, DRAIN TO SOURCE VOLTAGE (V)
700 C, CAPACITANCE (pF) 600 500 400 300 200 100 0 0 10 20 30 40 COSS CRSS 50 60 CISS
VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
VDD = BVDSS 375
GATE SOURCE VOLTAGE RL = 167 IG(REF) = 0.45mA VGS = 10V 0.75BVDSS 0.50BVDSS 0.25BVDSS
8 VDD = BVDSS 6
250
4
125
2
DRAIN SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0
70
80
90
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
4
VGS, GATE TO SOURCE VOLTAGE (V)
800
500
10
RFM3N45, RFM3N50, RFP3N45, RFP3N50 Test Circuits and Waveforms
tON td(ON) tr RL VDS 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT
0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 13. GATE CHARGE TEST CIRCUIT
FIGURE 14. GATE CHARGE WAVEFORMS
5

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