 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI1501DL Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY Channel N-Channel VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V 3.8 @ VGS = -4.5 V 5.0 @ VGS = -2.5 V ID (mA) 250 150 -180 -100 P-Channel P Channel -20 20 SC-70 (6-Leads) S1 G1 D2 1 2 3 Top View 6 5 4 Marking Code YY Lot Traceability and Date Code Part # Code D1 G2 S2 RE XX SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg N-Channel 20 "8 250 200 500 0.20 0.13 P-Channel -20 "8 -180 -140 -500 Unit V mA W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 625 (Total) Unit _C/W Document Number: 71303 S-03840--Rev. B, 21-May-01 www.vishay.com S 1 SI1501DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Drain Source Breakdown Voltage Gate Threshold Voltage Gate-Body Gate Body Leakage V(BR)DSS VGS( h) GS(th) IGSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = -10 mA VDS = VGS, ID = 50 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "8 V V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = -20 V, VGS = 0 V, TJ = 55_C VDS w 2.5 V, VGS = 5.0 V On-State On State Drain Currenta ID( ) D(on) VDS v -2.5 V, VGS = -5.0 V VDS w 4.5 V, VGS = 8.0 V VDS v -4.5 V, VGS = -8.0 V VGS = 2.5 V, ID = 150 mA Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = -2.5 V, ID = -75 mA VGS = 4.5 V, ID = 250 mA VGS = -4.5 V, ID = -180 mA Forward Transconductancea Diode Forward Voltagea gf fs VSD VDS = 2.5 V, ID = 50 mA VDS = -2.5 V, ID = - 50 mA IS = 50 mA, VGS = 0 V IS = -50 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 120 -120 400 -400 1.6 4 1.2 2.6 150 200 0.7 -0.7 1.2 -1.2 2.5 5 2.0 3.8 mS V W mA 20 -20 0.4 -0.4 24 -24 0.9 -0.9 "2 "2 0.001 -0.001 1.5 -1.5 "100 "100 100 -100 1 -1 mA nA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd d Ciiss Coss Crss N-Ch N-Channel VDS = 5 V, VGS = 4.5 V, ID = 100 mA P Channel P-Channel VDS = -5 V, VGS = -4.5 V ID = -100 mA V V, 100 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDS = 5 V, VGS = 0 V P Channel P-Channel VDS = -5 V VGS = 0 V V, P-Ch N-Ch P-Ch N-Ch P-Ch 300 300 25 25 100 100 15 15 11 11 5 5 pF 450 450 pC Switching Turn-On Turn On Time Rise Time Turn-Off Turn Off Delay Time Fall Time td( ) d(on) tr td( ff) d(off) tf N-Channel N Channel VDD = 3 V, RL = 100 W ID = 0.25 A, VGEN = 4.5 V, Rg = 10 W P Channel P-Channel VDD = -3 V RL = 100 W 3 V, ID = -0.25 A, VGEN = -4.5 V, Rg = 10 W N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 7 25 25 19 19 9 9 12 12 35 35 30 30 15 15 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com Document Number: 71303 S-03840--Rev. B, 21-May-01 2 SI1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.25 VGS = 3.5 thru 5 V 1.00 I D - Drain Current (A) 3V 0.75 2.5 V 0.50 2V 0.25 1.5 V 0.00 0 1 2 3 VDS - Drain-to-Source Voltage (V) 1V 4 I D - Drain Current (A) 0.6 0.8 TC = -55_C 25_C N-CHANNEL Transfer Characteristics 0.4 125_C 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 7 6 r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 50 Capacitance 40 5 4 3 VGS = 2.5 V 2 1 0 0 1 2 ID - Drain Current (A) 3 4 VGS = 4.5 V 0 0 4 8 12 16 20 C - Capacitance (pF) 30 20 Coss 10 Crss Ciss VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 100 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 100 m A 6 r DS(on) - On-Resistance (W) (Normalized) 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 200 Qg - Total Gate Charge (pC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71303 S-03840--Rev. B, 21-May-01 www.vishay.com S 3 SI1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 1 I S - Source Current (A) TJ = 125_C r DS(on) - On-Resistance ( W ) 6 8 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.1 ID = 250 mA 4 TJ = 25_C 0.01 TJ = -55_C 2 0.001 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -50 ID = 50 mA -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.vishay.com 4 Document Number: 71303 S-03840--Rev. B, 21-May-01 SI1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.2 1.0 4.5 V I D - Drain Current (A) 4V 3.5 V 3V 2.5 V 2V 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I D - Drain Current (A) 0.8 0.6 0.4 0.2 0.3 125_C 5V 0.5 TC = -55_C 0.4 25_C P-CHANNEL Transfer Characteristics 0.2 0.1 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 Capacitance r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 6 36 4 VGS = 2.5 V VGS = 4.5 V 27 Ciss 18 Coss 9 Crss 2 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 6 r DS(on) - On-Resistance (W) (Normalized) 200 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 Qg - Total Gate Charge (pC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71303 S-03840--Rev. B, 21-May-01 www.vishay.com S 5 SI1501DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 TJ = 150_C 0.1 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 6 5 4 ID = 180 mA 3 2 1 0 1.0 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.01 TJ = 25_C 0.001 0.00 0.5 01 1.5 VSD - Source-to-Drain Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA 0.2 V GS(th) Variance (V) 0.1 0.0 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.vishay.com 6 Document Number: 71303 S-03840--Rev. B, 21-May-01 |
Price & Availability of SI1501DL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |