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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BRY62 Silicon controlled switch
Product specification Supersedes data of 1997 Jul 21 1999 Apr 22
Philips Semiconductors
Product specification
Silicon controlled switch
DESCRIPTION Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPLICATIONS * Switching applications. MARKING TYPE NUMBER BRY62 MARKING CODE A51
1 Top view 2
MSB014
BRY62
PINNING PIN 1 2 3 4 anode gate anode cathode cathode gate DESCRIPTION
handbook, 2 columns 4
3 a ag kg k
MBB068
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL NPN transistor VCBO VCER VEBO IC ICM IE IERM VCBO VCEO VEBO IE IERM collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current emitter current (DC) repetitive peak emitter current tp = 10 s; = 0.01 open emitter open base open collector tp = 10 s; = 0.01 open emitter RBE = 10 k open collector note 1 note 2 - - - - - - - - - - - - 70 70 5 175 175 -175 -2.5 -70 -70 -70 175 2.5 V V V mA mA mA A PARAMETER CONDITIONS MIN. MAX. UNIT
PNP transistor collector-base voltage collector-emitter voltage emitter-base voltage emitter current (DC) repetitive peak emitter current V V V mA A
1999 Apr 22
2
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL Combined device Ptot Tstg Tj Tamb Notes
PARAMETER
CONDITIONS Tamb 25 C -
MIN.
MAX.
UNIT
total power dissipation storage temperature junction temperature operating ambient temperature
250 +150 150 +150
mW C C C
-65 - see Fig.14 -65
1. Provided the IE rating is not exceeded. 2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series resistance of 100 k. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 500 UNIT K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor ICER IEBO VCEsat VBEsat hFE fT Cc Ce ICEO IEBO hFE VAK collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage DC current gain transition frequency collector capacitance emitter capacitance VCE = 70 V; RBE = 10 k VCE = 70 V; RBE = 10 k; Tj = 150 C IC = 0; VEB = 5 V; Tj = 150 C IC = 10 mA; IB = 1 mA IC = 10 mA; IB = 1 mA IC = 10 mA; VCE = 2 V IC = 10 mA; VCE = 2 V; f = 100 MHz IE = ie = 0; VCB = 20 V; f = 1 MHz IC = ic = 0; VEB = 1 V; f = 1 MHz IB = 0; VCE = -70 V; Tj = 150 C IC = 0; VEB = -70 V; Tj = 150 C IE = 1 mA; VCB = -5 V RKG-K = 10 k IA = 50 mA; IAG = 0 IA = 50 mA; IAG = 0; Tj = - 55 C IA = 1 mA; IAG = 10 mA IH holding current RKG-K = 10 k; IAG = 10 mA; VBB = -2 V; (see Fig.5) 3 - - - - 1.4 1.9 1.2 1 V V V mA - - - - - 50 100 - - - - 3 100 10 10 500 900 - - 5 25 -10 -10 15 MHz pF pF A A nA A A mV mV PARAMETER CONDITIONS MIN. MAX. UNIT
PNP transistor collector cut-off current emitter cut-off current DC current gain
Combined device forward on-state voltage
1999 Apr 22
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL Switching times ton
PARAMETER
CONDITIONS VKG-K = -0.5 to 4.5 V; RKG-K = 1 k; see Figs 6 and 7 VKG-K = -0.5 to 0.5 V; RKG-K = 10 k RKG-K = 10 k; see Figs 8 and 9
MIN. - - -
MAX.
UNIT s s s
turn-on time
0.25 1.5 15
toff
turn-off time
a (anode) (e2 ) e2
handbook, halfpage
PNP transistor
ag (anode gate) (c 1,b 2) b 1,c 2
P N P
kg (cathode gate) (b1 ,c 2)
NPN transistor e1 k (cathode) (e1 )
MBB680
N P N
MBB681
c 1,b 2
Fig.2 Two transistor equivalent circuit.
Fig.3 PNPN silicon controlled switch structure.
1999 Apr 22
4
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
handbook, halfpage
a IA IKG IAG ag VAK -IK k
MBB682
handbook, halfpage
IA a RKG-K VBB kg k IAG ag DUT
kg
MBB683
Fig.4 Silicon controlled switch symbol.
Fig.5 Equivalent test circuit for holding current.
i handbook, halfpage 4.5
V (V)
MBB687
90 %
handbook, halfpage
+12 V
2.7 k 16 k RKG-K VAK +50 V 0 -0.5 10 % time
VI VAG-K
MBB685
ton
time
Fig.7 Fig.6 Test circuit for turn-on time.
Pulse duration increased until dashed curve disappears.
1999 Apr 22
5
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
VAK handbook, halfpage (V) +12 handbook, halfpage V 1 k C VAK mercury wetted contact RKG-K tq 0 C < Copt 2.7 k +50 V 16 k 12 C = Copt
MBB686
time
MBB684
- 12
Fig.9 Fig.8 Test circuit for turn-off time.
Capacitance increased until C = Copt dashed curve disappears.
MBB584
handbook, halfpage
1.2
MBB583
handbook, halfpage
1.8
hFE X 0.8 2V VAG-K = 5 V
h FE X 1.4
0.4
1.0
0 0 50 IAG (mA) 100
0.6 0 50 100 Tamb ( o C) 150
X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 C.
X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 C.
Fig.10 Normalized DC current gain as a function of anode gate current.
Fig.11 Normalized DC current gain as a function of ambient temperature.
1999 Apr 22
6
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
MBB581
handbook, halfpage
1.2
handbook, halfpage
1.2
MBB587
IH VAK X 1 X 1.1
1
0.8 0.9
0.6 50 0 50 100 150 Tamb ( o C)
0.8 -50
0
50
100 150 Tamb (oC)
X is the value of VAK at IC = 10 mA; IAG = 10 mA; IA = 1 mA; VBB = -2 V; RKG-K = 10 k; Tamb = 25 C.
X is the value of IH at IC = 10 mA; IAG = 10 mA; VBB = -2 V; Rkg-K = 10 k; Tamb = 25 C.
Fig.12 Normalized anode-cathode voltage as a function of ambient temperature.
Fig.13 Normalized holding current as a function of ambient temperature.
MBB580
handbook, halfpage
300
P tot (mW) 200
100
0 0 50 150 Tamb ( o C) 150
Fig.14 Power derating curve.
1999 Apr 22
7
Philips Semiconductors
Product specification
Silicon controlled switch
PACKAGE OUTLINE Plastic surface mounted package; 4 leads
BRY62
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 22
8
Philips Semiconductors
Product specification
Silicon controlled switch
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BRY62
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 22
9
Philips Semiconductors
Product specification
Silicon controlled switch
NOTES
BRY62
1999 Apr 22
10
Philips Semiconductors
Product specification
Silicon controlled switch
NOTES
BRY62
1999 Apr 22
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp12
Date of release: 1999 Apr 22
Document order number:
9397 750 05727

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