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| BUZ 350 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 350 VDS 200 V ID 22 A RDS(on) 0.12 Package TO-218 AA Ordering Code C67078-S3117-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 Unit A ID IDpuls 88 TC = 33 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 22 12 mJ ID = 22 A, VDD = 50 V, RGS = 25 L = 1.39 mH, Tj = 25 C Gate source voltage Power dissipation 450 VGS Ptot 20 125 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 350 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.09 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.12 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 14 A Semiconductor Group 2 07/96 BUZ 350 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 9 15 1400 280 130 - S pF 1900 400 200 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 14 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 70 110 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 250 320 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 90 120 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 350 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.2 180 1.2 22 88 V 1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 44 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 350 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 24 A 20 130 W 110 Ptot 100 90 80 70 60 ID 18 16 14 12 10 50 8 40 30 20 10 0 0 20 40 60 80 100 120 C 160 6 4 2 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A 10 0 ID 10 2 t = 17.0s p ZthJC 10 -1 /ID = 10 1 VD S 100 s R n) (o DS 1 ms 10 -2 D = 0.50 0.20 10 -3 10 ms 0.10 0.05 10 0 DC 10 -4 single pulse 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 350 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 50 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.38 Ptot = 125W l kj i h g fV GS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.32 RDS (on) 0.28 0.24 0.20 0.16 a b c d e f ID 40 35 30 25 20 c e c d e f dg h i j k l g 15 10 5 0 0 a b 0.12 0.08 0.04 0.00 0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 i k l h j k l 10.0 20.0 2 4 6 8 V 12 5 10 15 20 25 30 35 40 A 50 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 45 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 20 S ID 35 30 gfs 16 14 12 25 10 20 8 15 6 10 5 0 0 4 2 0 1 2 3 4 5 6 7 8 V 10 0 5 10 15 20 25 30 VGS A ID 40 Semiconductor Group 6 07/96 BUZ 350 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 14 A, VGS = 10 V 0.38 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.32 RDS (on) 0.28 98% VGS(th) 3.6 3.2 typ 0.24 0.20 0.16 0.12 0.08 0.04 0.00 -60 2.8 2.4 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 2 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 1 A IF Ciss 10 1 Coss 10 0 Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 350 Avalanche energy EAS = (Tj ) parameter: ID = 22 A, VDD = 50 V RGS = 25 , L = 1.39 mH 500 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 33 A 16 V EAS 400 350 300 250 200 150 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 100 50 0 20 2 0 40 60 80 100 120 C 160 0 10 20 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 350 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
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