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| HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features * High efficiency and high output power Absolute Maximum Ratings (TC = 25C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 250 3 -20 to +60 -40 to +90 Units mA V C C 239 HE7601SG Optical and Electrical Characteristics (TC = 25C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise and fall time Symbol PO p VF IR Ct tr, tf Min 30 740 -- -- -- -- -- Typ -- 770 50 -- -- 30 10 Max -- 800 -- 2.5 100 -- -- Units mW nm nm V A pF ns Test Conditions I F = 200 mA I F = 200 mA I F = 200 mA I F = 200 mA VR = 3 V VR = 0 V, f = 1 MHz I F = 50 mA Typical Characteristic Curves 240 HE7601SG Typical Characteristic Curves (cont) 241 |
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