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HGTG18N120BN
Data Sheet December 2001
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49288.
Features
* 54A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Avalanche Rated * Temperature Compensating SABERTM Model www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
Ordering Information
PART NUMBER HGTG18N120BN PACKAGE TO-247 BRAND G18N120BN
C G
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
HGTG18N120BN
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG18N120BN 1200 54 26 160 20 30 100A at 1200V 390 3.12 125 -55 to 150 260 8 15 UNITS V A A A V V W W/oC mJ oC oC s s
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 25A, L = 400H, TJ = 25oC. 3. VCE(PK) = 960V, TJ = 125oC, RG = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6.0 100 TYP 250 2.45 3.8 7.0 10.5 165 220 23 17 170 90 0.8 1.9 1.8 MAX 250 3 2.7 4.2 250 200 250 28 22 200 140 1.0 2.4 2.2 UNITS V V A A mA V V V nA A V nC nC ns ns ns ns mJ mJ mJ
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 18A, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP QG(ON)
IC = 150A, VCE = VGE VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 200H, VCE(PK) = 1200V IC = 18A, VCE = 600V IC = 18A, VCE = 600V VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4)
td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IGBT and Diode at TJ = 25oC ICE = 18A VCE = 960V VGE = 15V RG = 3 L = 1mH Test Circuit (Figure 18)
(c)2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
HGTG18N120BN
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 18A VCE = 960V VGE = 15V RG = 3 L = 1mH Test Circuit (Figure 18) MIN TYP 21 17 205 140 0.85 3.7 2.6 MAX 26 22 240 200 1.1 4.9 3.1 0.32 UNITS ns ns ns ns mJ mJ mJ
oC/W
Typical Performance Curves
60 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE , COLLECTOR TO EMITTER CURRENT (A) 120 100 80 60 40 20 0 TJ = 150oC, RG = 3, VGE = 15V, L = 200H
VGE = 15V 50 40 30 20 10 0 25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX, OPERATING FREQUENCY (kHz)
TJ = 150oC, RG = 3, L = 1mH, V CE = 960V TC = 75oC, VGE = 15V, IDEAL DIODE 100 50
VCE = 960V, RG = 3, TJ = 125oC
25 ISC 20
250
200
15 tSC 10
150
10
1 5
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC fMAX2 = (PD - PC) / (EON2 + EOFF) o PC = CONDUCTION DISSIPATION 75oC 75 C (DUTY FACTOR = 50%) 110oC ROJC = 0.32oC/W, SEE NOTES 110oC 10 20
VGE 15V 12V 15V 12V 30 40
100
5
12
13
14
15
16
50
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG18N120BN Rev. B
ISC, PEAK SHORT CIRCUIT CURRENT (A)
30
300
HGTG18N120BN Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 80
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 100 TC = -55oC 80 TC = 150oC 60 TC = 25oC
60 TC = -55oC 40
TC = 25oC
TC = 150oC 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
40
20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
12 EON2 , TURN-ON ENERGY LOSS (mJ) 10
EOFF , TURN-OFF ENERGY LOSS (mJ)
RG = 3, L = 1mH, VCE = 960V TJ = 150oC, VGE = 12V, VGE = 15V
4.5 RG = 3, L = 1mH, VCE = 960V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 5 10 15 20 25 30 35 40 TJ = 25oC, VGE = 12V OR 15V TJ = 150oC, VGE = 12V OR 15V
8 6 4 2 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
40 tdI , TURN-ON DELAY TIME (ns)
RG = 3, L = 1mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V
120 RG = 3, L = 1mH, VCE = 960V 100 trI , RISE TIME (ns) 80 60 40 20 TJ = 25oC, TJ = 150oC, VGE = 12V
35
30
25
20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 25oC OR TJ = 150oC, VGE = 15V 0 5 10 15 20 25 30 35 40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
HGTG18N120BN Typical Performance Curves
350 td(OFF)I , TURN-OFF DELAY TIME (ns)
Unless Otherwise Specified (Continued)
250 225
RG = 3, L = 1mH, VCE = 960V
RG = 3, L = 1mH, VCE = 960V
300 VGE = 12V, VGE = 15V, TJ = 150oC 250 tfI , FALL TIME (ns)
200 175 150 125 100 75 VGE = 12V, VGE = 15V, TJ = 25oC 50 25 30 35 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 12V OR 15V TJ = 150oC, VGE = 12V OR 15V
200
150
100 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
PULSE DURATION = 250s 150
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 20V
20
IG(REF) = 2mA, RL = 33.3, TC = 25oC
15
VCE = 1200V
VCE = 800V
100 TC = 25oC 50 TC = 150oC 0 6 7 8 9 10 11 12 13 14 15 VGE, GATE TO EMITTER VOLTAGE (V) TC = -55oC
10 VCE = 400V 5
0 0 50 100 QG , GATE CHARGE (nC) 150 200
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
ICE, COLLECTOR TO EMITTER CURRENT (A)
6 FREQUENCY = 1MHz 5 C, CAPACITANCE (nF) CIES 4 3 2 1 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
30 25 20
DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250s VGE = 15V OR 12V
VGE = 10V 15 10 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
CRES COES
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
(c)2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
HGTG18N120BN Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 PD t2 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG18N120BND
90% VGE L = 1mH VCE RG = 3 + VDD = 960V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
HGTG18N120BN Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2 . EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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