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| Product Bulletin OP950 June 1996 PIN Silicon Photodiode Type OP950 Features *Wide receiving angle *Linear response vs. irradiance *Fast switching time *Side-looking package ideal for space limited applications Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in A, use the formula ID = 10(0.042 TA-1.5) where TA is ambient temperature in o C. Description The OP950 device consists of a PIN silicon photodiode molded in a clear epoxy package which allows spectral response from visible to infrared light wavelengths. The wide receiving angle provides relatively even reception over a large area. The side-looking package is designed for easy PC board mounting. This photodiode is mechanically and spectrally matched to Optek' GaAs and s GaAlAs series of infrared emitting diodes. Typical Performance Curves Coupling Characteristics OP950 and OP240 VR = 5 V IF = 20 mA Relative Response vs. Wavelength - Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-58 Distance Between Lens Tips - inches (972) 323-2200 Fax (972) 323-2396 Type OP950 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL IL ID V(BR) VF CT tr, tf PARAMETER Reverse Light Current Reverse Dark Current Reverse Breakdown Voltage Forward Voltage Total Capacitance Rise Time, Fall Time MIN TYP 8 1 60 MAX UNITS 18 60 1.2 A nA V V pF ns TEST CONDITIONS VR = 5 V, Ee = 1 mW/cm2(3) VR = 30 V, Ee = 0 IR = 100 A IF = 1 mA VR = 20 V, Ee = 0, f = 1.0 MHz VR = 20 V, = 850 nm, RL = 50 4 5 Typical Performance Curves Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage Normalized Light and Dark Current vs Ambient Temperature VR = 5 V = 935 nm Normalized to TA = 25o C TA = 25o C Ee = 0 mW/cm2 f = 1 MHz TA = 25o C = 935 nm Normalized to VR = 5 V Light Current Dark Current VR - Reverse Voltage - V VR - Reverse Voltage - V TA - Ambient Temperature - oC Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement VR = 5 V TA = 25o C = 935 nm Test Conditions: = 935 nm VR = 5 V Distance Lens to Lens = 1.5 inches Ee - Irradiance - mW/cm2 - Angular Displacement - Deg. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-59 |
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