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SGP13N60UFD
IGBT
SGP13N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 6.5A High input impedance CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGP13N60UFD 600 20 13 6.5 52 8 56 60 25 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 2.0 3.5 62.5 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGP13N60UFD Rev. A1
SGP13N60UFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff.icient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 6.5mA, VCE = VGE IC = 6.5A, VGE = 15V IC = 13A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---375 63 13 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------20 27 70 97 85 95 180 30 32 85 168 180 165 345 25 7 8 7.5 --130 150 --270 --200 250 --500 35 12 14 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 6.5A, RG = 50, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 6.5A, RG = 50, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 6.5A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
IF = 8A
Test Conditions TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 37 55 3.5 4.5 65 124
Max. 1.7 -55 -5.0 -138 --
Units V ns A nC
IF = 8A, di/dt = 200A/us
TC = 25C TC = 100C TC = 25C TC = 100C
(c)2002 Fairchild Semiconductor Corporation
SGP13N60UFD Rev. A1
SGP13N60UFD
60 Common Emitter TC = 25 50 20V
30 Common Emitter VGE = 15V TC = 25 TC = 125
25
Collector Current, IC [A]
40
15V
Collector Current, IC [A]
8
20
30 12V 20 V GE = 10V 10
15
10
5
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
12 Common Emitter V GE = 15V
VCC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
3
13A
9
6.5A 2 IC = 3A 1
Load Current [A]
6
3 Duty cycle : 50% TC = 100 Power Dissipation = 14W 0.1 1 10 100 1000
0 0 30 60 90 120 150
0
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, V [V] CE
16
12
12
8
8
4 IC = 3A 0 0 4 8
13A 6.5A
13A 4 IC = 3A 0 6.5A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGP13N60UFD Rev. A1
SGP13N60UFD
600 Common Emitter V GE = 0V, f = 1MHz T C = 25 Cies
300 Common Emitter V CC = 300V, VGE = 15V IC = 6.5A T C = 25 T C = 125
500
Capacitance [pF]
Ton
Switching Time [ns]
400
100
300 Coes 200
Tr
100
Cres
0 1 10 30
10 1 10 100 400
Collector - Emitter Voltage, V CE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
600
Switching Time [ns]
Common Emitter V CC = 300V, VGE = 15V IC = 6.5A T C = 25 T C = 125
600 Eon Toff
Switching Loss [uJ]
Toff
Eoff Eon 100 Eoff
Tf
100
Tf
50 1 10 100 300
10 1 10
Common Emitter V CC = 300V, V GE = 15V IC = 6.5A T C = 25 T C = 125 100 400
Gate Resistance, R G [ ]
Gate Resistance, RG [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200 Common Emitter VCC = 300V, VGE = 15V RG = 50 TC = 25 TC = 125
1000 Common Emitter VCC = 300V, V GE = 15V RG = 50 TC = 25 TC = 125
100
Switching Time [ns]
Switching Time [ns]
Toff Toff Tf 100 Tf
Ton
Tr 10 0 2 4 6 8 10 12 14 50 0 2 4 6 8 10 12 14
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGP13N60UFD Rev. A1
SGP13N60UFD
500 Common Emitter V CC = 300V, V GE = 15V RG = 50 T C = 25 T C = 125 100
15 Common Emitter RL = 46 Tc = 25
Gate - Emitter Voltage, VGE [ V ]
12
Switching Loss [uJ]
9 300 V 6 VCC = 100 V 3 200 V
Eon
Eon 10 Eoff Eoff 5 0 2 4 6 8 10 12 14
0 0 5 10 15 20 25
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed)
100
50us
Collector Current, I C [A]
10
IC MAX. (Continuous) 1
100us
Collector Current, I C [A]
10
1
DC Operation Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
1
0.1 0.05
Safe Operating Area V GE=20V, T C=100 C 0.1 1 10 100 1000
o
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [/W]
1
0.5 0.2 0.1
0.1
0.05
Pdm
0.02 0.01 single pulse 0.01 10
-5 -4 -3 -2 -1
t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
10
10
10
10
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGP13N60UFD Rev. A1
SGP13N60UFD
100 T C = 25 T C = 100
100 VR = 200V IF = 8A TC = 25 TC = 100
10
Reverse Recovery Current, I rr [A]
0 1 2 3
Forward Current, IF [A]
10
1
0.1
1 100
1000
Forward Voltage Drop, V FM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
500
100 V R = 200V IF = 8A T C = 25 T C = 100
Stored Recovery Charge, Qrr [nC]
400
Reverce Recovery Time, t rr [ns]
80
VR = 200V IF = 8A TC = 25 TC = 100
300
60
200
40
100
20
0 100 1000
0 100 1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGP13N60UFD Rev. A1
SGP13N60UFD
Package Dimension
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGP13N60UFD Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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