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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF225 VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * Easy power control * Good thermal stability * Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION
g
MBB072
BLF225
PIN CONFIGURATION
k, halfpage
1
4
d
s
2
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.5 PL (W) 30 Gp (dB) > 8.5 D (%) > 60
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF225
MAX. 40 20 9 68 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE 2.6 K/W 0.3 K/W
102 handbook, halfpage ID (A)
MRA915
handbook, halfpage
100
MGP122
Ptot (W) 80
(2) (1) (2)
10 60
(1)
40 1 20
10-1 1
10
VDS (V)
102
0 0 40 80 120 Th (C) 160
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 30 mA VGS = 0; VDS = 12.5 V VGS = 20 V; VDS = 0 ID = 30 mA; VDS = 10 V ID = 3.5 A; VDS = 10 V ID = 3.5 A; VGS = 15 V VGS = 15 V; VDS = 10 V MIN. 40 - - 2 1.5 - - TYP. - - - - 2.2 0.25 16 120 140 20
BLF225
MAX. UNIT - 1 1 4.5 - 0.35 - - - - V mA A V S A pF pF pF
VGS = 0; VDS = 12.5 V; f = 1 MHz - VGS = 0; VDS = 12.5 V; f = 1 MHz - VGS = 0; VDS = 12.5 V; f = 1 MHz -
handbook, halfpage
6
MEA741
MRA244
T.C. (mV/K) 4
handbook,20 halfpage
ID (A) 15
2
0
10
-2 5 -4 -6 102
101
1
ID (A)
10
0 0 5 10 15 VGS (V) 20
VDS = 10 V. VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
handbook, halfpage
0.5 RDS(on) () 0.4
MGP123
handbook, halfpage
600
MEA739
C (pF)
400 0.3
0.2 200 0.1
Cos Cis
0 0 50 100 Tj (C) 150
0
0
4
8
12
VDS (V)
16
VGS = 15 V; ID = 3.5 A.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage C
60 rs (pF) 50
MRA242
40
30
20
10
0 0 4 8 12 VDS (V) VGS = 0; f = 1 MHz. 16
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.5 IDQ (mA) 100 PL (W) 30 GP (dB) > 8.5 typ. 9.5
BLF225
C (%) > 60 typ. 70
Ruggedness in class-B- operation The BLF225 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 15.5 V; f = 175 MHz at rated load power.
handbook, halfpage
20
MGP124
80 (%) 60
handbook, halfpage
Gp (dB) 15
50 PL (W)
MEA740
40
30 10 Gp 40 20
5
20
10
0 0 10 20 30 40 PL (W) 50
0
0 0 4 8 PIN (W) 12
Class-B operation; VDS = 12.5 V; IDQ = 100 mA; f = 175 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 100 mA; f = 175 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
handbook, full pagewidth
D.U.T. C1 L1 L2
L3
L6
C9
50 input
50 output C10
C8 C2 R1 C3 C5 R2 C4 L5 VBIAS R3 C6 VDS
MGP125
L4
R4
C7
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1 C2, C10 C3 C4 C5 C6 C7 C8 C9 L1 DESCRIPTION film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor (note 1) ceramic chip capacitor multilayer ceramic chip capacitor (note 1) electrolytic capacitor polyester capacitor multilayer ceramic chip capacitor (note 1) film dielectric trimmer 3 turns enamelled 0.5 mm copper wire stripline (note 2) 3 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube RF choke 1 turn enamelled 1.5 mm copper wire 0.4 W metal film resistor 0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 36 nH length 4 mm int. dia. 3.5 mm leads 2 x 5 mm VALUE 4 to 40 pF 5 to 60 pF 100 pF, 500 V 100 nF, 50 V 680 pF, 500 V 10 F, 63 V 100 nF, 250 V 43 pF, 500 V 7 to 100 pF 18 nH length 3.3 mm int. dia. 2 mm leads 2 x 5 mm 12 x 6 mm length 8.2 mm int. dia. 4 mm leads 2 x 5 mm DIMENSIONS
BLF225
CATALOGUE NO. 2222 809 07008 2222 809 07011
2222 852 47104
2222 030 38109
2222 809 07015
L2, L3 L4
31 28 nH
L5 L6
4312 020 36642
R1 R2 R3 R4 Notes
1 k 1 M 5 k 10
2322 151 51002 2322 151 51005 2322 151 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (r = 4.5), thickness 116 inch.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
handbook, full pagewidth
150
rivets
72
rivets strap strap
R3 L5 R2 C3 R1 L2 L1 C4 L4 L3 L6 C8 C5 C7 R4 C6
C1
C2
C9 C10
MGP126
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm.
Fig.12 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF225
handbook, halfpage
10
MGP128
handbook, halfpage
4
MGP129
Zi () 0
ri
ZL () 2
RL
xi -10
0 -20 XL
-30
-2 0 50 100 150 f (MHz) 200 0 50 100 150 f (MHz) 200
Class B-operation; VDS = 12.5 V; IDQ = 100 mA; PL = 30 W.
Class B-operation; VDS = 12.5 V; IDQ = 100 mA; PL = 30 W.
Fig.13 Input impedance as a function of frequency (series components), typical values.
Fig.14 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
30
MGA053
Gp (dB)
20
handbook, halfpage
10
Zi
ZL
MBA379
0 0 50 100 150 f (MHz) 200
Class-B operation; VDS = 12.5 V; IDQ = 100 mA; PL = 30 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF225
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF225
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

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