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| JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band * * * Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 (typ.) Maximum Ratings (Ta = 25C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V C C 000707EAA1 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-07-24 1/3 JDV2S05E Electrical Characteristics (Ta = 25C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 A VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 1 V, f = 470 MHz Test Condition Min 10 3.85 1.94 1.7 Typ. 4.2 2.2 1.9 0.3 Max 3 4.55 2.48 0.5 Unit V nA pF Note: Signal level when capacitance is measured. Vsig = 100 mVrms Marking FE 2000-07-24 2/3 JDV2S05E CV - VR 10 f = 1 MHz Vsig = 100 m Vrms 0.5 0.6 rs - VR f = 470 MHz Capacitance CV (pF) () Series resistance rs 1 0 1 2 3 4 5 6 7 0.4 0.3 0.2 0.1 0 0.1 1 10 Reverse voltage VR (V) Reverse voltage VR (V) 2000-07-24 3/3 |
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