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| LC ARGUS(R) LED Low current 3 mm (T1) LED, Non Diffused LS K389, LY K389, LG K389 Besondere Merkmale q q q q q q q q q q eingefarbtes, klares Gehause Kunststoffgehause mit spezieller Formgebung hohe Lichtstarke bei kleinen Stromen (typ. 2 mA) bei Einsatz eines aueren Reflectors zur Hintergrundbeleuchtung von Leuchtfeldern und LCD-Anzeigen geeignet. zur Direkteinkopplung in Lichtleiterflachen geeignet gleichmaige Ausleuchtung einer Streuscheibe (Weidruck) vor dem aueren Reflektor Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839 Hinweis: Bei farbigen Streuscheiben mu die spektrale Transmission an die, von der LED emittierte Wellenlange angepat werden. Features q colored, clear package q plasic package with a special design q high light intensity at low currents (typ. 2 mA) q in connection with an additional, custom built reflector suitable for backlighting of display panels q for optical coupling into light pipes q uniform illumination of a diffuser screen in front of the custom built reflector q solder leads with stand-off q available taped on reel q load dump resistant acc. to DIN 40839 q Note: If the diffuser screen is tinted, the spectral transmission must be adjusted to the wavelength emitted by the LED. Typ Type Emissionsfarbe Color of Emission super-red yellow green Gehausefarbe Color of Package red clear yellow clear green clear Lichtstrom Luminous Flux IF = 2 mA V (mlm) 1 (5.0 typ.) 1 (3.2 typ.) 1 (3.2 typ.) Bestellnummer Ordering Code LS K389-FO LY K389-FO LG K389-FO Q62703-Q1771 Q62703-Q1772 Q62703-Q1773 Streuung des Lichtstromes in einer Verpackungseinheit V max /V min 2.0. Luminous flux ratio in one packaging unit V max /V min 2.0. Semiconductor Group 1 11.96 VEX06712 LS K389, LY K389, LG K389 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 7.5 150 Einheit Unit C C C mA mA Top Tstg Tj IF IFM VR Ptot 5 20 V mW Rth JA 500 K/W Semiconductor Group 2 LS K389, LY K389, LG K389 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol LS Wellenlange des emittierten Lichtes (typ.) peak Wavelength at peak emission (typ.) IF = 7.5 mA Dominantwellenlange Dominant wavelength IF = 7.5 mA (typ.) dom (typ.) 635 Werte Values LY 586 LG 565 nm Einheit Unit 628 590 570 nm Spektrale Bandbreite bei 50 % rel max(typ.) Spectral bandwidth at 50 % rel max (typ.) IF = 7.5 mA Durchlaspannung Forward voltage IF = 2 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 45 45 25 nm 1.8 2.6 0.01 10 3 2.0 2.7 0.01 10 3 1.9 2.6 0.01 10 15 V V A A pF (typ.) tr (typ.) tf 200 150 200 150 450 200 ns ns Semiconductor Group 3 LS K389, LY K389, LG K389 Relative spektrale Emission rel = (), TA = 25 C, IF = 7.5 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik rel = f () Radiation characteristic Semiconductor Group 4 LS K389, LY K389, LG K389 Durchlastrom IF = f (VF) Forward current TA = 25 C Relativer Lichtstrom V/V (2 Relative luminous flux TA = 25 C mA) = f (IF) Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 5 LS K389, LY K389, LG K389 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 7.5 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 7.5 mA Durchlaspannung VF = f (TA) Forward voltage IF = 2 mA Relativer Lichtstrom V/V(25 C) = (TA) Relative luminous flux IF = 2 mA Semiconductor Group 6 LS K389, LY K389, LG K389 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Cathode mark: Kurzerer Lotspie Short solder lead Semiconductor Group 7 GEX06712 |
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