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| Preliminary data Silicon Carbide Schottky Diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery SDP20S30 SDB20S30 Product Summary VRRM Qc IF P-TO220-3.SMD 300 23 2x10 P-TO220-3-1. V nC A Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, single diode mode, TC =25C Operating and storage temperature Page 1 Type SDP20S30 SDB20S30 Package P-TO220-3-1. Ordering Code Q67040-S4419 Marking D20S30 S20S30 1 2 3 P-TO220-3.SMD Q67040-S4374 Maximum Ratings,at Tj = 25 C, unless otherwise specified (per leg) Parameter Continuous forward current, TC=100C RMS forward current, f=50Hz TC=25C, tp =10ms Symbol IF I FRMS Value 10 14 36 45 100 6.5 300 300 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current Tj=150C, TC=100C, D=0.1 I FRM I FMAX i2dt Non repetitive peak forward current tp =10s, TC=25C i 2 t value, TC=25C, tp =10ms As V W C VRRM VRSM Ptot T j , Tstg 2001-09-07 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case (per leg) SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1) SDP20S30 SDB20S30 Values min. typ. 35 max. 2.3 62 K/W Unit Symbol RthJC RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified (per leg) Parameter Static Characteristics Diode forward voltage IF =10A, Tj=25C IF =10A, Tj=150C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.5 15 20 1.7 1.9 A 200 1000 Reverse current VR =300V, Tj =25C VR =300V, Tj =150C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-09-07 Preliminary data Electrical Characteristics,at Tj = 25 C, unless otherwise specified (per leg) Parameter AC Characteristics Total capacitive charge1) VR =200V, IF =10A, diF /dt=-200A/s, Tj =150C SDP20S30 SDB20S30 Values min. typ. 23 n.a. max. nC ns pF 600 55 40 Unit Symbol Qc trr C - Switching time2) VR =200V, IF =10A, diF /dt=-200A/s, Tj =150C Total capacitance VR =0V, TC =25C, f=1MHz VR =150V, TC =25C, f=1MHz VR =300V, TC =25C, f=1MHz Page 3 2001-09-07 Preliminary data 1 Power dissipation (per leg) Ptot = f (TC ) 70 SDP20S30 SDB20S30 2 Diode forward current (per leg) IF = f (TC ) parameter: Tj 175 C 11 W A 9 8 60 55 50 P tot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IF 45 7 6 5 4 3 2 1 C 180 TC 0 0 20 3 Typ. forward characteristic (per leg) IF = f (VF ) parameter: Tj , tp = 350 s 20 4 Typ. forward power dissipation vs. average forward current (per leg) PF(AV)=f(IF ) TC =100C, d = tp/T 32 A 16 W 24 14 P F(AV) IF 12 10 8 6 4 2 0 0.6 20 16 -40C 25C 100C 125C 150C 12 8 4 0.8 1 1.2 1.4 1.6 1.8 2.2 V VF 0 0 2 Page 4 40 60 80 100 120 140 C 180 TC d=1 d=0.5 d=0.2 d=0.1 4 6 8 10 12 14 18 A IF(AV) 2001-09-07 Preliminary data 5 Typ. reverse current vs. reverse voltage (per leg)IR =f(VR ) 10 2 SDP20S30 SDB20S30 6 Transient thermal impedance (per leg) ZthJC = f (tp ) parameter : D = tp /T 10 1 SDP20S30 A K/W 10 1 10 0 10 0 Z thJC 10 -1 IR 10 -1 D = 0.50 10 -2 150C 125C 100C 25C 10 -2 0.20 0.10 0.05 single pulse 0.02 0.01 10 -3 10 -3 10 -4 50 100 150 200 V VR 300 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage (per leg)C= f(VR ) parameter: TC = 25 C, f = 1 MHz 450 8 Typ. C stored energy (per leg) EC=f(VR ) 2.5 pF J 350 300 EC 1 2 3 10 V VR 1.5 C 250 200 1 150 100 50 00 10 0 0 0.5 10 10 50 100 150 200 V VR 300 Page 5 2001-09-07 Preliminary data 9 Typ. capacitive charge vs. current slope (per leg)Qc =f(diF /dt) parameter: Tj = 150 C 22 SDP20S30 SDB20S30 nC 18 16 IF*2 IF*0.5 IF Qc 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/s 1000 diF/dt Page 6 2001-09-07 Preliminary data SDP20S30 SDB20S30 P-TO220-3-1 P-TO220-3-1 dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72 0.1 typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071 TO-220-3-45 (P-TO220SMD) dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701 2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ. 0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ. Page 7 2001-09-07 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. SDP20S30 SDB20S30 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-09-07 |
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