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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR679 Repetitive voltage up to Mean forward current Surge current 4500 V 3025 A 30 kA TARGET SPECIFICATION nov 02 - ISSUE : 03 Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 4500 4600 150 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 sin ,50 Hz, Tc=85C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 2000 A 150 3025 2785 30 4500 x 1E3 150 150 150 1.15 0.75 0.200 A A kA As V V mohm F (AV) FSM I t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 150 s C A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR679 S 45 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 14 3 -30 / 35.0 850 150 / 40.0 C/kW C/kW C kN g VRRM/100 AR679 RECTIFIER DIODE TARGET SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 150 140 130 120 110 100 90 80 70 60 50 0 1000 2000 3000 4000 5000 IF(AV) [A] 60 90 120 180 30 DC PF(AV) [W] 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 4000 5000 IF(AV) [A] 30 90 60 120 DC 180 AR679 RECTIFIER DIODE TARGET SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 170 150 130 110 90 70 50 0 1000 2000 3000 4000 5000 IF(AV) [A] 30 60 90 120 180 PF(AV) [W] 8000 7000 6000 90 120 180 5000 4000 3000 2000 1000 0 0 1000 30 60 2000 3000 4000 5000 IF(AV) [A] AR679 RECTIFIER DIODE TARGET SPECIFICATION nov 02 - ISSUE : 03 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 150 C SURGE CHARACTERISTIC Tj = 150 C 10000 9000 8000 Forward Current [A] 7000 ITSM [kA] 0.6 1.1 1.6 Forward Voltage [V] 2.1 2.6 6000 5000 4000 3000 2000 1000 0 35 30 25 20 15 10 5 0 1 10 n cycles 9 0.5 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16.0 14.0 12.0 Zth j-h [C/kW] 10.0 8.0 6.0 4.0 2.0 0.0 0.001 32.5 0.5 O 6 3 max O 10 1 max O 3.5 x 4 (both sid es) 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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