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| LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE * Very Low Capacitance -- Less than 1.0 pF @ Zero Volts * Low Noise Figure -- 6.0 dB Typ @ 1.0 GHz * Device Marking: 4M 1 1 CATHODE 2 ANODE 2 PLASTIC SOD- 323 CASE 477 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value 7.0 Unit Vdc THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR-5 Board,* T A = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 -55 to+150 Unit mW mW/C C/W C R JA T J , T stg *FR-5 Minimum Pad ORDERING INFORMATION Device MMDL101T1 Package SOD-323 Shipping 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 A) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) *Notes on Next Page Symbol V (BR)R CT IR NF V Min 7.0 Typ 10 Max -- Unit Volts pF nAdc dB Vdc -- -- -- -- 0.88 20 6.0 0.5 1.0 250 -- 0.6 F S1-1/3 LESHAN RADIO COMPANY, LTD. MMDL101T1 TYPICAL CHARACTERISTICS 1.0 100 I R , REVERSE LEAKAGE ( A) 0.5 V R = 3.0 Vdc 0.2 0.1 0.07 0.05 I F , FORWARD CURRENT (mA) 0.7 10 T A = 85C T A = -40C 1.0 T A = 25C MMBD110T1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.02 MMBD110T1 0.01 30 40 50 60 70 80 90 100 110 120 130 T A , AMBIENT TEMPERATURE (C) V F , FORWARD VOLTAGE (VOLTS) Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 1 1 10 C, CAPACITANCE (pF) NF, NOISE FIGURE (dB) 0.9 9 8 7 6 5 4 3 2 1 LOCAL OSCILLATOR FREQUENCY = 1.0GHz (Test Circuit Figure 5) 0.8 0.7 MMBD110T1 0.6 0 1.0 2.0 3.0 4.0 MMBD110T1 0.1 0.2 0.5 1.0 2.0 5.0 10 V R , REVERSE VOLTAGE (VOLTS) P LO , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit NOTES ON TESTING AND SPECIFICATIONS Note1--C C andC T are measured using a capacitance bridge(Boonton Electronics Model 75A or equivalent). Note2--Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz.The LO power is adjusted for 1.0 mW. I F amplifier NF = 1.5 dB, f = 30MHz, see Figure 5. S1-2/3 LESHAN RADIO COMPANY, LTD. MMDL101T1 PACKAGE DIMENSIONS SOD-323 PLASTIC PACKAGE CASE 477-02 ISSUE A K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. MILLIMETERS DIM E D 1 2 B INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 C J NOTE 3 H A B C D E H J K MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 0.63 mm 0.025'' STYLE 1: PIN 1. CATHODE 2. ANODE 1.60 mm 0.063'' 2.85 mm 0.112'' mm inches 0.83 mm 0.033'' ( ) SOD-323 Soldering Footprint S1-3/3 |
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