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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF5S19150/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors MRF5S19150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19150SR3
Designed for PCN and PCS base station applications at frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. * Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 32 Watts Avg. Power Gain -- 14 dB Efficiency -- 26% ACPR -- - 50 dB IM3 -- - 36.5 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 100 Watts CW Output Power * Excellent Thermal Stability * Qualified Up to a Maximum of 32 V Operation * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 32 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1 NI - 880 MRF5S19150R3
CASE 465C - 02, STYLE 1 NI - 880S MRF5S19150SR3
MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 - 0.5, +15 357 2 - 65 to +150 200 100 Unit Vdc Vdc Watts W/C C C Watts
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 80C, 32 W CW Symbol RJC Value (1,2) 0.49 0.53 Unit C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3 1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 3.1 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- 2.8 3.8 0.24 9 3.5 -- -- -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) (1) Part is internally matched both on input and output. Gps 13 14 -- dB
24
26
--
%
IM3
--
- 36.5
- 35
dBc
ACPR
--
- 50
- 48
dBc
IRL
--
- 17
-9
dB
MRF5S19150R3 MRF5S19150SR3 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
+ C9 R1 VGG R2 + C8 C7 C6 C5 C14 Z11 RF INPUT Z8 Z1 Z2 C1 Z3 C2 Z4 C4 C3 Z5 Z6 Z7 Z12 Z9 DUT Z10 Z13 Z14 C24 Z15 RF OUTPUT R3 C15 C16 + C21 + C22 VDD + C23 B1 C17 C18 + C19 + C20
B2
C26
C27
+
C32 + C30
+ C33 + C31
Freescale Semiconductor, Inc...
+ C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C11 C12
R4 C13 C25 C28 C29
1.023 x 0.082 Microstrip 0.398 x 0.082 Microstrip 0.203 x 0.082 Microstrip 0.074 x 0.082 Microstrip 0.630 x 0.084 Microstrip 0.557 x 1.030 x 0.237 Microstrip Taper 0.103 x 1.030 Microstrip 1.280 x 0.046 Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
1.280 x 0.046 Microstrip 0.090 x 1.055 Microstrip 1.125 x 0.068 Microstrip 1.125 x 0.068 Microstrip 0.505 x 1.055 Microstrip 0.898 x 0.105 Microstrip 1.133 x 0.082 Microstrip Arlon GX0300 - 55- 22, 0.03, r = 2.55
Figure 1. MRF5S19150 Test Circuit Schematic
Table 1. MRF5S19150 Test Circuit Component Designations and Values
Part B1, B2 C1, C2 C3 C4, C5, C13, C14, C24, C25 C8, C10 C6, C12, C16, C17, C18, C27, C28, C29 C7, C11, C15, C26 C9 C23 C19, C20, C21, C22, C30, C31, C32, C33 R1 R2 R3, R4 Short RF Beads 0.6 - 4.5 Variable Capacitors, Gigatrim 0.8 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1.0 F, 50 V SMT Tantalum Capacitors 0.1 F Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 100 F, 50 V Electrolytic Capacitor 470 F, 63 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitors 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Description
MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3 3
Freescale Semiconductor, Inc.
C17 C18 C9 B1 R3 VGG R2 R1 C15 C8 C7 C6 C16 C21 C22 C24 CUT OUT AREA C5 VDD C14 C19 C20 C23
C4 C1 C2 C10 C3 C11 C12
C32 C33 C26 C27
Freescale Semiconductor, Inc...
B2 MRF5S19150 Rev 4
R4
C13 C25 C30 C31 C28 C29
Figure 2. MRF5S19150 Test Circuit Component Layout
MRF5S19150R3 MRF5S19150SR3 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 ACPR IM3 1.228 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) IRL VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing Gps 40 35 30 25 20 -30 -35 -40 -45 -50 1920 1940 1960 1980 2000 -55 2020 , DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -20 -30 -40 -50 -60 IRL, INPUT RETURN LOSS (dB) IDQ = 2100 mA 1700 mA
5 1900
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16 IDQ = 2100 mA 15 G ps , POWER GAIN (dB) 1700 mA 1400 mA 14 1050 mA 13 700 mA 12 11 1 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurement, 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 700 mA -45 -50 1050 mA -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1400 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurement, 2.5 MHz Tone Spacing
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 Pout , OUTPUT POWER (dBm) -30 -35 -40 -45 7th Order -50 -55 -60 0.1 1 TWO-TONE SPACING (MHz) 10 VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA Two-Tone Measurements, Center Frequency = 1960 MHz 5th Order 3rd Order
59 58 57 56 55 P1dB = 53.01 dBm (199.99 W) 54 53 52 51 50 49 35 36 37 38 39 VDD = 28 Vdc, IDQ = 1400 mA Pulsed CW, 8 sec (on), 1 msec (off) Center Frequency = 1960 MHz 40 41 42 43 44 45 P3dB = 53.71 dBm (234.96 W)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG., N-CDMA Gps ACPR VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) IM3 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IM3 (dBc), ACPR (dBc) 160
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Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power
0 -10 -20 -30 -40 (dB) -50 -60 -70 -80 -90 -100 -7.5 -IM3 @ 1.2288 MHz Integrated BW
1.2288 MHz Channel BW MTBF FACTOR (HOURS X AMPS2)
109
+IM3 @ 1.2288 MHz Integrated BW
108
107
-ACPR @ 30 kHz Integrated BW
+ACPR @ 30 kHz Integrated BW
106 100
120
140
180
200
220
TJ, JUNCTION TEMPERATURE (C) -6 -4.5 -3 -1.5 0 1.5 3 4.5 6 7.5 This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application.
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
Figure 10. MTBF Factor versus Junction Temperature
MRF5S19150R3 MRF5S19150SR3 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
f = 1990 MHz Zload f = 1930 MHz
Zo = 10
f = 1930 MHz Zsource f = 1990 MHz
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VDD = 28 V, IDQ = 1400 mA, Pout = 32 W Avg. f MHz 1930 1960 1990 Zsource 1.89 - j5.24 1.64 - j5.29 1.3 - j5.49 Zload 1.06 - j1.58 0.88 - j1.37 0.90 - j1.21
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3 7
Freescale Semiconductor, Inc.
NOTES
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MRF5S19150R3 MRF5S19150SR3 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
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MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3 9
Freescale Semiconductor, Inc.
NOTES
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MRF5S19150R3 MRF5S19150SR3 10
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B
M (INSULATOR)
M bbb ccc H
M
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
Freescale Semiconductor, Inc...
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
CASE 465B - 03 ISSUE B NI - 880 MRF5S19150R3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
B
1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
(FLANGE)
B
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE A NI - 880S MRF5S19150SR3
MOTOROLA RF DEVICE DATA
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MRF5S19150R3 MRF5S19150SR3 11
Freescale Semiconductor, Inc.
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA / EUROPE / LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF5S19150R3 MRF5S19150SR3 MOTOROLA RF DEVICE DATA For More Information On This Product, MRF5S19150/D 12
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