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| TN6728A / NZT6728 Discrete POWER & Signal Technologies TN6728A NZT6728 C E C C TO-226 BE B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 60 60 5.0 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6728A 1.0 8.0 50 125 Max *NZT6728 1.0 8.0 125 Units W mW/C C/W C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 1997 Fairchild Semiconductor Corporation TN6728A / NZT6728 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I E = 0 I E = 1.0 mA, IC = 0 VCB = 40 V, IE = 0 VEB = 5.0 V, IC = 0 60 60 5.0 0.1 0.1 V V V A A ON CHARACTERISTICS* hFE DC Current Gain I C = 50 mA, VCE = 1.0 V I C = 250 mA, VCE = 1.0 V I C = 500 mA, VCE = 1.0 V I C = 250 mA, IB = 10 mA I C = 250 mA, IB = 25 mA I C = 250 mA, VCE = 1.0 V 80 50 20 250 0.5 0.35 1.2 V V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS hfe Ccb Small-Signal Current Gain Collector-Base Capacitance VCE = 5.0 V, IC = 200 mA, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% Typical Characteristics vs Collector Current 400 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 I C - COLLECTOR CURRENT (A) P8 V CE = 5V 300 125 C = 10 - 40 C 25 C 200 - 40 C 25 C 100 125 C 0 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 1 1.5 TN6728A / NZT6728 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) V - BASE-EMITTER ON VOLTAGE (V) BE(ON) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 0.8 0.8 - 40 C 25 C 125 C - 40 C 25 C 0.6 0.6 125 C 0.4 0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) P 78 VCE = 5V 1 I C 0.2 1000 10 100 - COLLECTOR CURRENT (mA) P8 1000 C OBO - COLLECTOR-BASE CAPACITANCE (pF) Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 VCB = 40V 10 Collector-Base Capacitance vs Collector-Base Voltage 40 F = 1.0 MHz 30 1 20 0.1 10 25 50 75 100 125 TA - AMBIENT TEMPERATURE (C) P8 150 0 0 4 8 12 Pr 78 16 20 24 28 V CB- COLLECTOR-BASE VOLTAGE (V) h FE - GAIN BANDWIDTH PRODUCT (MHz) 250 V CE = 10V 200 150 100 50 0 I C - COLLECTOR CURRENT (A) Gain Bandwidth Product vs Collector Current Safe Operating Area TO-226 10 10 1 DC T 100 S* S* DC *PULSED OPERATION T A = 25 C T 0.1 CO 1.0 LLE CTO ms RL * EA AM D= BIE 25 NT C = 25 C LIMIT DETERMINED BY BV CEO 0.01 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) P8 100 TN6728A / NZT6728 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 |
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