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Datasheet File OCR Text: |
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N2906E EPITAXIAL PLANAR PNP TRANSISTOR B B1 FEATURES : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. : Cob=4.5pF(Max.) @VCB=5V. 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 H A1 Low Leakage Current A C 1 6 C 2 5 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 Low Collector Output Capacitance MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 200 150 -55 150 UNIT V V V mA mA mW EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 J D Q2 1 2 3 Marking Type Name ZA 2002. 9. 17 Revision No : 0 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz Vout V in 275 TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0 TYP. - MAX. -50 -50 300 -0.25 UNIT nA nA V V V V -0.4 -0.85 V -0.95 4.5 10 12 10 400 60 4.0 dB MHz pF pF k x10-4 Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * VCE=-10V, IC=-1mA, f=1kHz 1.0 100 3.0 - Delay Time td 10k C Total 4pF - - 35 Rise Time Switching Time tr 0.5V -10.6V 300ns VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 35 nS Vout V in 275 Storage Time tstg 10k 1N916 or equiv. C Total 4pF - 225 Fall Time tf 9.1V -10.9V 20s VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 75 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 17 Revision No : 0 2/4 2N2906E I C - VCE COLLECTOR CURRENT I C (mA) -100 -80 -60 -40 -20 0 0 -1 -2 -1 -0.9 -0.8 h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-55 C COMMON EMITTER VCE =-1V -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 IB =-0.1mA COMMON EMITTER Ta=25 C 100 50 30 -3 -4 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VBE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COMMON EMITTER I C /I E =10 VCE(sat) - I C -1 -0.5 -0.3 COMMON EMITTER I C /I B =10 -1 -0.5 -0.3 Ta=-55 C Ta=25 C Ta=125 C -0.1 -0.05 -0.03 Ta=1 25 C Ta=25 C Ta=-55 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE -200 COLLECTOR CURRENT I C (mA) -160 -120 5C Ta=25 C Ta=55 C COMMON EMITTER VCE =-1V VCE - I B -1.0 -0.8 IC =1mA IC =10mA I C =30mA -0.6 -0.4 -0.2 -40 0 0 -0.4 Ta=12 -80 -0.8 -1.2 -1.6 0 -0.001 COMMON EMITTER Ta=25 C -0.01 -0.1 -1 I C =100mA -10 BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (mA) 2002. 9. 17 Revision No : 0 3/4 2N2906E 50 30 CAPACITANCE C ob (pF) C ib (pF) COLLECTOR POWER DISSIPATION PC (mW) C ob - VCB , C ib - VEB f=1MHz Ta=25 C Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 10 5 3 C ib C ob 1 0.5 -0.1 -0.3 -1 -3 -10 -30 REVERSE VOLTAGE V CB (V) V EB (V) 2002. 9. 17 Revision No : 0 4/4 |
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