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CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package ADG784
FUNCTIONAL BLOCK DIAGRAM
ADG784
S1A D1 S1B S2A D2 S2B S3A D3 S3B S4A D4 S4B 1-OF-2 DECODER
FEATURES Low Insertion Loss and On Resistance: 4 Typical On-Resistance Flatness <2 Bandwidth >200 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: <1% Low Quiescent Supply Current (100 nA Typical) Fast Switching Times t ON 10 ns t OFF 4 ns TTL/CMOS Compatible For Functionally Equivalent Devices in 16-Lead QSOP/ SOIC Packages, See ADG774 APPLICATIONS 100VG-AnyLAN Token Ring 4 Mbps/16 Mbps ATM25/155 NIC Adapter and Hubs Audio and Video Switching Relay Replacement
EN
IN
GENERAL DESCRIPTION
The ADG784 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on-resistance variation is typically less than 0.5 with an input signal ranging from 0 V to 5 V. The bandwidth of the ADG784 is greater than 200 MHz and this, coupled with low distortion (typically 0.5%), makes the part suitable for switching fast ethernet signals. The on-resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, also makes the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation making the parts ideally suited for portable and battery powered instruments. The ADG784 operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table.
These switches conduct equally well in both directions when ON, and have an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The ADG784 switches exhibit break-beforemake switching action.
PRODUCT HIGHLIGHTS
1. Also Available as ADG774 in 16-Lead QSOP and SOIC. 2. Wide Bandwidth Data Rates >200 MHz. 3. Ultralow Power Dissipation. 4. Extended Signal Range. The ADG784 is fabricated on a CMOS process giving an increased signal range that fully extends to the supply rails. 5. Low Leakage over Temperature. 6. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer. 7. Crosstalk is typically -70 dB @ 30 MHz. 8. Off isolation is typically -60 dB @ 10 MHz. 9. Available in Chip Scale Package (CSP).
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2001
ADG784-SPECIFICATIONS
SINGLE SUPPLY (V
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB Distortion Charge Injection CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001 IIN IO
NOTES 1 Temperature ranges are as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
DD
=5V
10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
B Version TMIN to 25 C TMAX 0 V to VDD 2.2 5 0.15 0.5 0.5 1 0.01 0.5 0.01 0.5 0.01 0.5
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ MHz typ % typ pC typ pF typ pF typ pF typ
Test Conditions/Comments
VD = 0 V to VDD, IS = -10 mA VD = 0 V to VDD, IS = -10 mA VD = 0 V to VDD; IS = -10 mA
1 1 1 2.4 0.8
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V; Test Circuit 2 VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V; Test Circuit 2 VD = VS = 4.5 V; VD = VS = 1 V; Test Circuit 3
0.001 0.5 10 20 4 8 5 1 -65 -75 240 0.5 10 10 20 30
VIN = VINL or VINH
RL = 100 , CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 100 , CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 100 , CL = 35 pF, VS1 = VS2 = 5 V; Test Circuit 5 RL = 100 , f = 10 MHz; Test Circuit 7 RL = 100 , f = 10 MHz; Test Circuit 8 RL = 100 ; Test Circuit 6 RL = 100 CL = 1 nF; Test Circuit 9 f = 1 kHz f = 1 kHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or VDD VIN = 5 V VS/VD = 0 V
1 1 100
A max A typ A typ mA max
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ADG784 SINGLE SUPPLY
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB Distortion Charge Injection CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001 IIN IO
NOTES 1 Temperature ranges are as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
(VDD = 3 V
10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
B Version TMIN to 25 C TMAX 0 V to VDD 4 10 0.15 0.5 2 4 0.01 0.5 0.01 0.5 0.01 0.5
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ MHz typ % typ pC typ pF typ pF typ pF typ
Test Conditions/Comments
VD = 0 V to VDD, IS = -10 mA VD = 0 V to VDD, IS = -10 mA VD = 0 V to VDD, IS = -10 mA
1 1 1 2.0 0.4
VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V; Test Circuit 2 VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V; Test Circuit 2 VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3
0.001 0.5 12 25 5 10 5 1 -65 -75 240 2 3 10 20 30
VIN = VINL or VINH
RL = 100 , CL = 35 pF, VS = 1.5 V; Test Circuit 4 RL = 100 , CL = 35 pF, VS = 1.5 V; Test Circuit 4 RL = 100 , CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 RL = 50 , f = 10 MHz; Test Circuit 7 RL = 50 , f = 10 MHz; Test Circuit 8 RL = 50 ; Test Circuit 6 RL = 50 CL = 1 nF; Test Circuit 9 f = 1 kHz f = 1 kHz f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or VDD VIN = 3 V VS/VD = 0 V
1 1 100
A max A typ A typ mA max
Table I. Truth Table
EN 1 0 0
IN X 0 1
D1 Hi-Z S1A S1B
D2 Hi-Z S2A S2B
D3 Hi-Z S3A S3B
D4 Hi-Z S4A S4B
Function DISABLE IN = 0 IN = 1
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ADG784
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25C unless otherwise noted.)
TERMINOLOGY
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA (Pulsed at 1 ms, 10% Duty Cycle max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150C Chip Scale Package JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 32C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
PIN CONFIGURATION
IN NC VDD NC EN
S1A S1B D1 S2A S2B
1 2 3 4 5
PIN 1 INDICATOR
ADG784
TOP VIEW
15 14 13 12 11
S4A S4B D4 S3A S3B
NC = NO CONNECT
NOTE: EXPOSED PAD TIED TO SUBSTRATE, GND.
Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Logic Control Input. Ohmic resistance between D and S. On Resistance match between any two channels i.e., RON max - RON min. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the switch "OFF." IS (OFF) ID (OFF) Drain Leakage Current with the switch "OFF." ID, IS (ON) Channel Leakage Current with the switch "ON." VD (VS) Analog Voltage on Terminals D, S. CS (OFF) "OFF" Switch Source Capacitance. CD (OFF) "OFF" Switch Drain Capacitance. CD, CS (ON) "ON" Switch Capacitance. tON Delay between applying the digital control input and the output switching on. See Test Circuit 4. tOFF Delay between applying the digital control input and the output switching Off. tD "OFF" time or "ON" time measured between the 90% points of both switches, when switching from one address state to another. See Test Circuit 5. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an "OFF" switch. Bandwidth Frequency response of the switch in the ON state measured at 3 dB down. Distortion RFLAT(ON)/RL
VDD GND S D IN EN RON RON
D2 6 NC 7 GND 8 NC 9 D3 10
20 19 18 17 16
ORDERING GUIDE
Model ADG784BCP
Temperature Range -40C to +85C
Package Description Chip Scale Package
Package Option CP-20
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG784 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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Typical Performance Characteristics-ADG784
5.0 TA = 25 C 4.5 4.0
ON RESPONSE - dB
0 VDD = 5V
VDD = 2.7V
3.5 3.0
RON -
-2
VDD = 3.0V
2.5 2.0 1.5 1.0 0.5 0 1.3 2.5 3.7 VS OR VD DRAIN OR SOURCE VOLTAGE - V 4.9 VDD = 4.5V VDD = 5.0V
-4
-6 10k
100k
10M 1M FREQUENCY - Hz
100M
TPC 1. On Resistance as a Function of VD (VS) for Various Single Supplies
TPC 4. On Response vs. Frequency
3.0 VDD = 5V
0 -10 VDD = 5V RL = 100
2.5
-20
2.0
ATTENUATION - dB
4.9
+85 C
-30 -40 -50 -60 -70 -80 -90
RON -
1.5
+25 C -40 C
1.0
0.5
0
1.3 2.5 3.7 VS OR VO DRAIN OR SOURCE VOLTAGE - V
-100 100k
1M
10M FREQUENCY - Hz
100M
1G
TPC 2. On Resistance as a Function of VD (VS) for Different Temperatures with 5 V Single Supplies
TPC 5. Off Isolation vs. Frequency
4.5 VDD = 3V 4.0 3.5 3.0 2.5 -40 C 2.0 1.5 1.0 0.5 0 +25 C +85 C
0 -10 -20 VDD = 5V RL = 100 V P-P = 0.316V
ATTENUATION - dB
-30 -40 -50 -60 -70 -80 -90
RON -
0.6 1.1 1.6 2.1 2.6 VS OR VD DRAIN OR SOURCE VOLTAGE - V
-100 100k
1M
10M FREQUENCY - Hz
100M
1G
TPC 3. On Resistance as a Function of VD (VS) for Different Temperatures with 3 V Single Supplies
TPC 6. Crosstalk vs. Frequency
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-5-
ADG784
20 VDD = 5V TA = 25 C 15
CHARGE INJECTION - pC
10
5
0
-5
-10 0 0.5 1.0 1.5 3.0 3.5 2.0 2.5 SOURCE VOLTAGE - V 4.0 4.5 5.0
TPC 7. Charge Injection vs. Source Voltage
10 BASE TX+ TX1 10 BASE TX- 100 BASE TX+ TX2 100 BASE TX- RJ45 10 BASE TX+ RX1 10 BASE TX- TRANSFORMER 100 BASE TX+ RX2 100 BASE TX-
ADG784
10 BASE TX
100 BASE TX
Figure 1. Full Duplex Transceiver
TX1
120
100
RX1
Figure 2. Loop Back
Figure 3. Line Termination
Figure 4. Line Clamp
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ADG784 Test Circuits
IDS V1 IS (OFF) S D VS A S D ID (OFF) A VD VS S D ID (ON) A VD
VS
RON = V1/IDS
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
5V 0.1 F VIN VDD S VS IN EN GND D RL 100 VOUT 90% CL 35pF VOUT 90% 3V 50% 50%
t ON
t OFF
Test Circuit 4. Switching Times
5V 0.1 F
VDD S1A D1 VS S1B VS DECODER EN GND RL 100 CL 35pF VOUT VOUT VIN
3V 50% 0V 50% VS 50% 50%
tD
tD
Test Circuit 5. Break-Before-Make Time Delay
VDD 0.1 F
VDD 0.1 F
ADG784
NETWORK ANALYZER S1A 50
ADG784
NETWORK ANALYZER S1A 50 50 VS
IN
VS
IN
VIN
D1 50 EN GND
VOUT
VIN
D1 50 EN GND
VOUT
Test Circuit 6. Bandwidth
Test Circuit 7. Off Isolation
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ADG784
VDD 0.1 F
ADG784
S2A
NETWORK ANALYZER 50
S1A 50
VOUT
IN D1 VIN EN GND D2 50
Test Circuit 8. Channel-to-Channel Crosstalk
5V
VDD RS VS S1A S1B S2A S2B S3A S3B S4A S4B
ADG784
D1 VOUT VIN D2 VOUT VOUT D3 VOUT QINJ = CL VOUT VOUT
CL 1nF CL 1nF CL 1nF CL 1nF 1-OF-2 DECODER EN IN
3V
D4 VOUT
Test Circuit 9. Charge Injection
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
20-Lead CSP (CP-20)
0.157 (4.0) BSC SQ PIN 1 INDICATOR 0.010 (0.25) MIN
20 1
TOP VIEW
0.148 (3.75) BSC SQ
12 MAX 0.035 (0.90) MAX 0.033 (0.85) NOM SEATING PLANE 0.020 (0.50) BSC
0.031 (0.80) MAX 0.026 (0.65) NOM
0.012 (0.30) 0.009 (0.23) 0.007 (0.18) 0.030 (0.75) 0.022 (0.60) 0.014 (0.50)
BOTTOM VIEW
11 10 6 5
0.080 (2.25) 0.083 (2.10) SQ 0.077 (1.95)
0.080 (2.00) REF
0.008 (0.20) REF
0.002 (0.05) 0.0004 (0.01) 0.0 (0.0)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS
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PRINTED IN U.S.A.
0.024 (0.60) 0.017 (0.42) 0.009 (0.24) 0.024 (0.60) 0.017 (0.42) 16 0.009 (0.24) 15
C02374-2.5-4/01(0)
VS

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