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HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 48 A 2.2 V 48 A 2.7 V Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM T stg Test Conditions T J = 25C to 150C600 T J = 25C to 150C; R GE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms V GE= 15 V, T VJ = 125C, R G = 10 W Clamped inductive load, L = 100 mH V GE= 15 V, V CE = 360 V, T J = 125C, R G = 82 W, non-repetitive TC = 25C Maximum Ratings V 600 20 30 48 24 96 I CM = 48 @ 0.8 V CES 10 150 -55 ... +150 150 -55 ... +150 300 260 TO-247 AD V V V A A A A Features ms W C C C C C * International standard package JEDEC TO-247 AD * High frequency IGBT and anti-parallel FRED in one package * 2nd generation HDMOSTM process * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity * Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies C (TAB) G E G = Gate, E = Emitter, C C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque, TO-247 TO-247 AD 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3.5 T J = 25C T J = 125C V V mA mA nA V V BV CES V GE(th) ICES IGES V CE(sat) IC IC = 750 mA, V GE = 0 V = 1.5 mA, V CE = V GE 6.5 500 8 100 V CE = 0.8 * V CES V GE = 0 V V CE = 0 V, V GE = 20 V IC = I C90, V GE = 15 V Advantages * Space savings (two devices in one package) * Suitable for surface mounting * Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) * Reduces assembly time and cost IXSH 24N60U1 IXSH 24N60AU1 2.2 2.7 IXYS reserves the right to change limits, test conditions, and dimensions. 92820I (7/00) (c) 2000 IXYS All rights reserved 1-2 IXSH 24N60U1 IXSH 24N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 13 65 1800 200 45 75 20 35 100 200 450 500 275 2 100 200 1.8 475 600 450 4 3 0.25 90 30 50 S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.83 K/W K/W TO-247 AD (IXSH) Outline g fs I C(on) C ies C oes C res Qg Q ge Q gc t d(on) t ri t d(off) t fi E off t d(on) t ri Eon t d(off) t fi E off R thJC R thCK IC = I C90 ; V CE = 10 V, Pulse test, t 300 ms, duty cycle 2 % V GE = 15 V, V CE = 10 V V CE = 25 V, V GE = 0 V, f = 1 MHz I C = I C90, V GE = 15 V, V CE = 0.5 V CES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 24N60U1 24N60AU1 24N60AU1 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 24N60U1 24N60AU1 24N60U1 24N60AU1 1.5 2.49 Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 15 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms 10 VR = 360 V TJ = 125C 150 IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C 35 1 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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