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| Logic Gate Detector Vorlaufige Daten / Preliminary Data SFH 5400 Chip position 1.2 1.1 0.3 0...0.1 6.7 6.2 GND 1.1 0.9 4.5 4.3 Photosensitive area 0.5 x 0.5 OUT GEO06966 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Geeignet fur Anwendungen im Bereich von 500 nm bis 900 nm q Fotodiode mit integriertem Schmitt-Trigger q SMT-Bauform q TTL- und CMOS-kompatibel q Ausgang: push-pull Anwendungen q Optischer Schalter q Lichtschranken q Pulsformer q Zahler 4.0 3.7 2.54 mm spacing VCC 0...5 0...0.1 1.1 0.9 Features q Suitable for applications from 500 nm to 900 nm q Photodiode with built-in Schmitt trigger q SMT package q TTL and CMOS compatible q Output: push-pull Applications q Optoelectronic switch q Interrupter q Pulse former q Photoelectric counter Typ Type SFH 5400 Bestellnummer Ordering Code Q62703-Q2275 Semiconductor Group 1 08.97 SFH 5400 VCC Shield Amplifier Schmitt Trigger OUT GND OHF00358 Block Diagram Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Versorgungsspannung Supply voltage Ausgangsspannung Output voltage Ausgangsstrom Output current Ausgangsleistung TA = 25 C Total output power Funktionsbereich Functional Characteristics Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Versorgungsspannung Supply voltage Semiconductor Group Symbol Symbol Wert Value - 40 ... + 85 Einheit Unit C Top; Tstg VCC VO Iq Pq - 0.5 ... 15 - 0.5 ... 15 - 25 ... 40 100 V V mA mW Symbol Symbol Wert Value - 40 ... + 85 Einheit Unit C Top; Tstg VCC 4.5 ... 15 V 2 SFH 5400 Kennwerte Characteristics TA = - 40 ... 85 C, VCC = 4.5 ... 15 V, Ee = 3.2 ... 10 mW/cm2 TA = 25 C, VCC = 5 V, Ee = 6.5 mW/cm2 for typical values Bezeichnung Description Schwelle Bestrahlungsstarke Threshold radiant intensity (Ausgang L H) (Output L H) = 660 nm Min. Bestrahlungsstarke, Ausgang H Min. radiant intensity, Output H = 660 nm Max. Bestrahlungsstarke, Ausgang L Max. radiant intensity, Output L = 660 nm Hysterese Hysteresis Ausgangsspannung L Output voltage L IOL = 6.4 mA Ausgangsspannung H Output voltage H IOH = - 2.6 mA Symbol Symbol typ. Wert Value Limit - mW/cm2 1.3 Einheit Unit EeSchw EeHmin - < 3.2 mW/cm2 EeLmax Ee - > 0.16 mWcm2 > 0.2 0.15 - < 0.5 mW/cm2 V VOL VOH VCC - 1.8 > 2.4 V IOHH Ausgangsleckstrom (VO > VCC = 4.5 V) Output leakage current (VO > VCC = 4.5 V) VO = 5.5 V VO = 15 V Kurzschlustrom L Short-circuit current L tp < 10 ms, Ee = 0; VCC = VO = 5.5 V VCC = VO = 15 V A 0.2 0.25 < 100 < 500 mA IOSL 40 80 > 25 > 40 Semiconductor Group 3 SFH 5400 Kennwerte Characteristics (cont'd) TA = - 40 ... 85 C, VCC = 4.5 ... 15 V, Ee = 3.2 ... 10 mW/cm2 TA = 25 C, VCC = 5 V, Ee = 6.5 mW/cm2 for typical values Bezeichnung Description Kurzschlustrom H Short-circuit current H tp < 10 ms, V0 = GND; VCC = 5.5 V VCC = 15 V Versorgungsstrom L Supply current L Ee = 0; VCC = 5.5 V VCC = 15 V Versorgungsstrom Supply current L VCC = 5.5 V VCC = 15 V Ausgangsverzogerungszeit1) Ausgang H L Output delay time1) Output H L Ausgangsverzogerungszeit1) Ausgang L H Output delay time1) Output L H Anstiegszeit Ausgang (10% 90%) Rise time output (10% 90%) Abfallzeit Ausgang (90% 10%) Fall time output (90% 10%) Symbol Symbol typ. Wert Value Limit mA Einheit Unit IOSH - 22 - 45 < - 10 < - 25 ICCL 3.5 4 <6 < 7.5 mA ICCH 3.4 3.8 <5 <6 - mA tPHL 200 ns tPLH 200 - ns tr tf 30 10 - - ns ns 1) Gemessen von 50% Punkt der ansteigenden Flanke Eingangspuls bis zu 1,3 V Punkt der ansteigenden Flanke Ausgangspuls (tPLH), bzw. von 50% Punkt der abfallenden Flanke Eingangspuls bis zu 1,3 V Punkt der abfallenden Flanke Ausgangspuls (tPHL). Measured from 50% of the rising edge of the input pulse to 1.3 V of the rising edge of the output pulse (tPLH) or from 50% of the descending edge input pulse to 1.3 V of the descending output pulse edge (tPHL), respectively. Semiconductor Group 4 SFH 5400 Output voltage VO = f (VCC, IC) 15 OHF00351 Rel. threshold Ee/Ee(VCC = 5 V) 1.02 Ee E e (VCC = 5 V) 1.01 OHF00352 Switching threshold 1.8 mW/cm 2 1.6 1.4 OHF00353 VO V 10 1.00 Threshold 1.2 _ L 0.99 1.0 _ H 5 I ch = 2.6 mA 0.98 0.6 0.4 0.97 0.2 0 0 5 10 V 15 0.96 0 5 10 V 15 0 400 500 600 700 V CC V CC mm 900 Output characteristics Voh = f (Ioh) VCC = 5 V 3.60 Voh V 3.55 3.50 3.45 3.40 3.35 3.30 3.25 3.20 0.01 OHF00354 0.10 1 mA 10 I oh Semiconductor Group 5 |
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