 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 E 0.75 0.15 2.54 0.25 2.54 0.25 1 23 3 * 4V DRIVE * VDSS ............................................................. -100V * rDS (ON) (MAX) ................................................ 0.26 * ID .................................................................... -20A * Integrated Fast Recovery Diode (TYP.) .........100ns * Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings -100 20 -20 -80 -20 -20 -80 25 -55 ~ +150 -55 ~ +150 2000 2.0 4.5 0.2 Unit V V A A A A A W C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 50H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -100V, VGS = 0V ID = -1mA, VDS = -10V ID = -10A, VGS = -10V ID = -10A, VGS = -4V ID = -10A, VGS = -10V ID = -10A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.20 0.25 -2.0 10.3 2360 198 99 13 30 139 74 -1.0 -- 100 Max. -- 0.1 -0.1 -2.0 0.26 0.32 -2.6 -- -- -- -- -- -- -- -- -1.5 5.00 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -50V, ID = -10A, VGS = -10V, RGEN = RGS = 50 IS = -10A, VGS = 0V Channel to case IS = -20A, dis/dt = 100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -102 40 -7 -5 -3 -2 10ms 100s tw = 10s 30 -101 -7 -5 -3 -2 1ms 20 10 -100 -7 -5 TC = 25C Single Pulse DC 0 0 50 100 150 200 -3 -2 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -50 VGS = -10V -8V -6V -5V -30 Tc = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V -4V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -40 -16 -6V -5V Tc = 25C Pulse Test -12 -20 -4V -8 -3V -10 -3V PD = 25W -4 PD = 25W 0 0 -10 -20 -30 -40 -50 0 0 -4 -8 -12 -16 -20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 VGS = ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -50 Tc = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () -40 0.4 -4V -30 0.3 -10V -20 ID = -40A -20A -10A 0.2 -10 0.1 Tc = 25C Pulse Test 0 0 -2 -4 -6 -8 -10 0 -10-1 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -50 Tc = 25C VDS = -10V Pulse Test 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) -40 101 7 5 4 3 2 -30 TC = 25C 75C 125C -20 100 7 5 4 3 2 -7 -100 VDS = -10V Pulse Test -10 0 0 -2 -4 -6 -8 -10 -2 -3 -4-5 -7 -101 -2 -3 -4-5 -7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 4 3 2 Tch = 25C f = 1MHZ VGS = 0V SWITCHING TIME (ns) 102 7 5 4 3 2 tr td(on) Tch = 25C VGS = -10V VDD = -50V RGEN = RGS = 50 -5 -7 -100 -2 -3 -4 -5 -7 -101 -2 -3 -4 -5 Coss 102 7 5 Crss 4 3 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 101 7 5 4 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -20A SOURCE CURRENT IS (A) -8 VDS = -20V -40 -6 -50V -80V -30 TC = 25C 75C -4 -20 125C -2 -10 0 0 10 20 30 40 50 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 0.5 3 2 0.2 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.2 100 7 5 3 2 1.0 0.8 PDM 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
Price & Availability of FX20KMJ-2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |