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Datasheet File OCR Text: |
Infrared Light Emitting Diodes LNA4602L GaAlAs Infrared Light Emitting Diode Unit: mm For optical control systems R1.750.1 s Features Not soldered 4.20.3 2.3 4.50.3 2.540.25 1.9 2.4 3.50.2 4.80.3 * High-power output, high-efficiency * Light-emitting pattern of almost point source * Ultra-miniature, thin side-view type package 2.4 1.2 2.8 1.8 2- 0.980.2 1.660.25 Parameter Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol IFP VR Topr Tstg Ratings 1.2 3 -20 to +60 -30 to +70 Unit A V C C 1 2.54 10 min. s Absolute Maximum Ratings Ta = 25C 12.8 min. 2- 0.450.15 0.450.15 2 1: Cathode 2: Anode Note) *: f = 100 Hz, Duty Cycle = 0.1% s Electro-optical Characteristics Ta = 25C Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Peak forward voltage Reverse current (DC) Half-power angle Note) 1. PO35% at t = 10 000 shot Symbol PO P VF VFP IR IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IFP = 1 A, tW = 0.14 ms VR = 3 V The angle in which radiant intencity is 50% 30 Conditions min 3 850 35 1.5 2.9 1.9 3.8 100 typ max Unit mW nm nm V V A f = 500 Hz, Duty = 7% 32 ms 1 s (1 shot) 2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz. PO (fC MHz) Cut-off Frequcency: 200 MHz fC: 10 log = -3 PO (1 MHz) 1 |
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