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| Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band (GHz) Marking Ordering Code (tape and reel) 32 Q62702-A826 Pin Configuration Package1) Cerec-X BAT 32 ... 18 (X, Ku) Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 6.5 50 150 - 55 ... + 150 - 55 ... + 150 Unit V mA C 1) For detailed information see chapter Package Outlines. BAT 32 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 1 mA Forward voltage IF = 1 mA IF = 10 mA Diode capacitance VR = 0.15 V, f= 1 MHz Differential resistance VF = 0, f= 10 kHz Symbol min. V(BR) VF - - CT Ro - - 0.2 0.6 0.20 15 - - 0.24 - pF k 6.5 Values typ. - max. - V Unit Forward current IF = f (VF) |
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