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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D727
BGY282 dual band UHF amplifier module for GSM900 and GSM1800
Preliminary specification 2001 Dec 04
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
FEATURES * Dual band GSM amplifier * 3.5 V nominal supply voltage * 33 dBm output power for GSM1800 * 35 dBm output power for GSM900 * Easy output power control by DC voltage * Internal input and output matching * Easy band selection by DC voltage * Suited for GPRS class 12 (duty cycle 4 : 8). APPLICATIONS * Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz.
12
BGY282
PINNING - SOT632A PIN 1 2 3, 6, 9, 12 4 5 7 8 10 11 VAPC Ground VS1 (GSM900) RF output 1 (GSM900) RF output 2 (GSM1800) VS2 (GSM1800) Vband RF input 2 (GSM1800) DESCRIPTION RF input 1 (GSM900)
1
2
3
4
5
6
DESCRIPTION The BGY282 is a power amplifier module in a SOT632A surface mounted ceramic package with a plastic cap. The module consists of two separated line-ups, one for GSM900 and one for GSM1800 with internal power control, input and output matching.
11 Bottom view
10
9
8
7
MBL253
Fig.1 Simplified outline
QUICK REFERENCE DATA RF performance at Tmb = 25 C. MODE OF OPERATION Pulsed; = 1 : 8 f (MHz) 880 to 915 1710 to 1785 VS (V) 3.5 3.5 VAPC (V) 2.2 2.2 PL (dBm) typ. 35 typ. 33 (%) 50 45 ZS , ZL () 50 50
2001 Dec 04
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Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS1, VS2 VAPC PD1, PD2 PL1 PL1 PL2 PL2 PS1 PS2 Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power 1 (GSM900) load power 1 (GSM900) load power 2 (GSM1800) load power 2 (GSM1800) total power from supply during pulse (GSM900) total power from supply during pulse (GSM1800) storage temperature operating mounting base temperature = 4 : 8; VSWRout > 2 : 1 =4:8 =4:8 = 4 : 8; VSWRout > 2 : 1 CONDITIONS VAPC = 0; RFIN = off VAPC > 0.5 V; RFIN = on MIN. - - - - - - - - - - -40 -30
BGY282
MAX. 7 5.5 3 10 36 35 35 34 7.5 4.5 +100 +90
UNIT V V V dBm dBm dBm dBm dBm W W C C
Note: PL is forward power, measured in a coupler.
2001 Dec 04
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Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
CHARACTERISTICS ZS = ZL = 50 ; PD1,2 = 0 dBm; VS1 = VS2 = 3.5 V; VAPC 2.2 V; T mb = 25 C; tp = 575 s; = 1 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise specified. SYMBOL Vband Iband IL PD1 PD2 PL1 PL2 1 2 H2, H3 PARAMETER band switch voltage band switch current leakage current input drive power (GSM900) input drive power (GSM1800) load power GSM900 load power GSM1800 efficiency GSM900 efficiency GSM1800 harmonics GSM900 harmonics GSM1800 input VSWR of active device VSWRin input VSWR of inactive device VAPC = 2.2 V VAPC = 2.2 V; VS1 = 3.1 V VAPC = 2.2 V VAPC = 2.2 V; VS1 = 3.1 V VAPC = 2 V VAPC = 2 V PL1 = 34.7 dBm PL2 = 32.3 dBm VS1,2 = 3.1 to 4.4 V; PD1,2 = 0 dBm; PL1 = 5 to 34.7 dBm; PL2 = 0 to 32.3 dBm VS1,2 = 3.1 to 5.15 V; VAPC 0.5 V VAPC = 0.2 V; PD1,2 = 0 mW CONDITIONS GSM1800 selected GSM900 selected MIN. 0 1.7 - - - -3 -3 34.7 34.2 32.3 31.7 43 38 - - - TYP. - - - - - - 2 35 34.5 33 32.3 50 45 - - MAX. 0.7 5.5 30 10 2 4 5 - - - - - - -38 -35 3:1 UNIT V V A A mA dBm dBm dBm dBm dBm dBm % % dBc dBc
ICM1, ICM2 peak control current
- -
8:1 -60 dBc
stability
- VS1,2 = 3 to 5 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm; PL1 = <35 dBm; PL2 = <33 dBm; VSWR = 6 : 1 through all phases VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm; - PD2 = 0 to 5 dBm; PL1 = <34 dBm; PL2 = <32 dBm; VSWR = 6 : 1 through all phases; = 4 : 8 VAPC = 0.5 V; PD1 = 3 dBm; PD2 = 5 dBm - - 120 - -
-
-60
dBc
isolation
- - - 1.5 1.5
-36 -20 200 2 2
dBm dBm dB/V s s
second harmonic isolation PL1 = 34.7 dBm from GSM900 into GSM1800 maximum control slope tr tf carrier rise time carrier fall time -5 dBm < PL1,2 < PL max PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm; time to settle within -0.5 dB of final PL PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm; time to settle within -0.5 dB of final PL
2001 Dec 04
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Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
SYMBOL
PARAMETER
CONDITIONS PL1 34 dBm; bandwidth = 100 kHz; f = 925 MHz PL1 34 dBm; bandwidth = 100 kHz; f = 935 MHz PL2 32 dBm; bandwidth = 100 kHz; f = 1805 MHz PD1,2 = -0.5 to 0.5 dBm; PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm; PL1,2 = constant during measurement PD1,2 = 4 %; f = 100 kHz; PL1 = 5 to 34.7 dBm; PL2 = 0 to 32.3 dBm PD1 = 0 dBm @ 915 MHz; PL1 = 34 dBm; Pi1 = -50 dBm @ 905 MHz; CG = P925 - Pi1 PD2 = 0 dBm @ 1785 MHz; PL2 = 32 dBm; Pi2 = -50 dBm @ 1765 MHz; CG = P1805 - Pi2 PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm VAPC = 2.2 V; difference PL with = 1 : 8 and = 4 : 8 VS1,2 = 5 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm; PL1 = <35 dBm; PL2 = <33 dBm; VSWR 6 : 1 through all phases VS1,2 = 4.2 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm; PL1 = <35 dBm; PL2 = <33 dBm; VSWR 10 : 1 through all phases VS1,2 = 4.2 V; PD1 = 0 to 3 dBm; PD2 = 0 to 5 dBm PL1 = <34 dBm; PL2 = <32 dBm; VSWR 6 : 1 through all phases; = 4 : 8
MIN. - - - -
TYP. - - - -
MAX. -71 -80 -76 6
UNIT dBm dBm dBm deg/dB
noise power GSM900 Pn noise power GSM1800 AM/PM conversion
AM/AM conversion
-
-
30
%
CG
conversion gain GSM900
-
25
-
dB
CG
conversion gain GSM1800
-
25
-
dB
3 dB control bandwidth GSM900, GSM1800 power drop 4 slot burst GSM900, GSM1800
0.5 -
- -
- 0.4
MHz dB
no degradation
ruggedness
no degradation
no degradation
2001 Dec 04
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Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
40 PL (dBm) 30 20
(3)
(1)
(2) (3) (4)
50 (%) 40
1785 MHz 1710 MHz 915 MHz
10 0 -10 -20 -30 1
30
(4) 880 MHz
20
(1) (2)
10
0 1.5 2 2.5 VC (V) 20 25 30 35 40 PL (dBm)
(1) = 880 MHz (2) = 915 MHz
(3) = 1710 MHz (4) = 1785 MHz
Z S = Z L = 50 ; VS = 3.5 V; P D = 0 dBm; T mb = 25 C; = 1 : 8; tp = 575 s.
ZS = Z L = 50 ; VS = 3.5 V; P D = 0 dBm; Tmb = 25 C; = 1 : 8; tp = 575 s.
Fig.2
Load power as a function of control voltage; typical values.
Fig.3
Efficiency as a function of load power; typical values.
-20 H2 (dBc)
1710 MHz 1785 MHz
-20 H3 (dBc) -30 -40
880 MHz 915 MHz
-40
-50
880 MHz 915 MHz
-60
-60
1710 MHz 1785 MHz
-70 -80 20 25 30 35 40 PL (dBm) -80 20 25 30 35 40 PL (dBm)
ZS = Z L = 50 ; VS = 3.5 V; P D = 0 dBm; Tmb = 25 C; = 1 : 8; tp = 575 s.
Z S = Z L = 50 ; VS = 3.5 V; P D = 0 dBm; T mb = 25 C; = 1 : 8; tp = 575 s.
Fig.4
Second harmonic as a function of load power; typical values.
Fig.5
Third harmonic as a function of load power; typical values.
2001 Dec 04
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Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
APPLICATION INFORMATION
BGY282
6
GND
PAM1
RF output 1
DCS out
Z0
7 RF output 2
5
Z0
+VS
C2 C4
8
VS2
VS1
4
C3 C1
+VS
9
GND
GND
3
C8
C7
VB
10
Vband
Vapc
2
VC
DCS in
Z0
11
RF output 2 GND RF output 1
1
Z0
RF in
12
Fig.6 Test circuit.
List of components QUANTITY 1 1 4 1 1 1 1 1 1 1 4 Note 1. The striplines are on a double etched printed circuit board (r = 4.6); thickness 0.8 mm C1 C2 C3 C4 C7 C8 R1 Z0 100 F / 35 V 100 F / 35 V 100 nF 100 nF 680 pF 100 pF 100 Ohms / 0.1 W 50 PAM1 BGY282 LOCATION VALUE / TYPE PCB Power amplifier module Jack assembly end launch Type no. 142-0701-881 SMA connector Electrol. capacitor Electrol. capacitor 0805 size SMD capacitor 0805 size SMD capacitor 0603 size SMD capacitor 0603 size SMD capacitor 0805 size SMD resistor stripline; note 1 width 1.4 mm Type no. ECEV1VA101P Type no. ECEV1VA101P Johnson Components Matsushita Matsushita DESCRIPTION REMARK SUPPLIER Roland Haefele
2001 Dec 04
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Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
TOP VIEW
Fig.7 PCB test circuit.
SOLDERING The indicated temperatures are those at the solder interfaces. Advised solder types are types with a liquidus less or equal to 210 C. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process can be used. Hand soldering is not recommended because of the nature of the contacts. The maximum allowed temperature is 250 C for a maximum of 5 seconds. The maximum ramp-up is 10 C per second. The maximum cool-down is 5 C per second.
0 0 1 2 3 4 t (min) 5
handbook, halfpage
300
MGM159
T (C) 200
100
Fig.8 Recommended reflow temperature profile.
2001 Dec 04
8
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
Fig.9 Soldering footprint for SOT632A.
2001 Dec 04
9
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
PACKAGE OUTLINE
BGY282
Leadless surface mounted package; plastic cap; 12 terminations
ZD (2x) 1
SOT632A
e (4x) 2
e1 (4x) 3 4 5
Z (2x)
Z5 (4x)
e2 (2x) 12 6 Z7 (4x)
Z2 (6x)
L (12x) 11 b (8x) 10 9 b1 (4x) 8 7 Z8 Z9 Z3 (2x) Z1 (4x)
Z4 (8x)
Z6 (4x)
Dimensions of terminations
D D1
Dimensions of solderresist
c
A
E1 pin 1 index
E
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.4 b 1.5 1.4 b1 c D D1 E E1 7.85 7.55 e e1 e2 L Z ZD Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
3.75 0.61 14.05 13.35 8.3 3.65 0.49 13.45 13.05 7.7
2.1 3.275 4.0
1.45 3.75 1.55 2.45 1.55 1.35 0.75 1.35 3.65 1.45 2.35 1.45 1.25 0.65
0.7 0.625 1.55 0.75 0.85 0.6 0.525 1.45 0.65 0.75
OUTLINE VERSION SOT632A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-09-26 01-11-20
2001 Dec 04
10
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BGY282
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Dec 04
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
SCA73
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp12
Date of release: 2001
Dec 04
Document order number:
9397 750 09163

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