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BGY288
Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900
Rev. 01 -- 2 February 2005 Preliminary data sheet
1. Product profile
1.1 General description
The BGY288 is a power amplifier module in a SOT775 surface mounted package with a plastic cap. In the module, a mix of state of the art technologies as InGaP, Si-Bicmos and Si passive integration are used to combine high performance with a small size. The module comprises two functional sections, one for low-band (GSM850/EGSM900) and one for high-band (DCS1800/PCS1900) with internal power detection, power control loop, input and output matching; see Figure 2. The power control circuit ensures a stable RF power output which is set by the voltage level on pin PC. The power control circuit is stabilized to compensate for variations in supply voltage, input power and temperature, and has a control range fully compliant with European Telecommunication Standards Institute (ETSI) time mask and power spectrum requirements.
1.2 Features
1.2.1 General features
s Quad band GSM amplifier s 34 dBm controlled output power for GSM850/EGSM900 s Suited for GPRS class 12 (duty cycle = 4 : 8) s Integrated power control loop s 3.6 V nominal supply voltage s Very small size (8 mm x 8 mm) s 32.5 dBm controlled output power for DCS1800/PCS1900 s Easy on/off and band select by digital control voltage s Internal input and output matching s Specification based on 3GPP TS 45.005
1.2.2 RF performance
RF performance with a typical pulsed, controlled output power at Tmb = 25 C; VBAT = 3.6 V; VSTAB = 2.8 V; ZS = ZL = 50 ; PD(LB) = 2 dBm / PD(HB) = 0 dBm; = 2 : 8. s f = 824 MHz to 849 MHz; @ PSAT = 50 %; PL = 34 dBm s f = 880 MHz to 915 MHz; @ PSAT = 55 %; PL = 34 dBm s f = 1710 MHz to 1785 MHz; @ PSAT = 50 %; PL = 32.5 dBm s f = 1850 MHz to 1910 MHz; @ PSAT = 50 %; PL = 32.5 dBm
1.3 Applications
s Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in four frequency bands: 824 MHz to 849 MHz, 880 MHz to 915 MHz, 1710 MHz to 1785 MHz and 1850 MHz to 1910 MHz.
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
2. Pinning information
2.1 Pinning
RFO_HB RFO_LB 14
GND
1
16
15
GND
13
GND
VBAT
2
12
VBAT
VBAT
3
11
VBAT
RFI_HB
4
10
RFI_LB
TXON
5
6 PC
7 VSTAB
8 BAND
9
n.c.
001aac028
Transparent top view
Fig 1. Pin configuration
2.2 Pin description
Table 1: Symbol GND VBAT
[1]
Pin description Pin 1, 13, 15 2, 3 11, 12 4 5 6 7 8 9 10 14 16 inner pads analog input analog output analog output ground Type ground supply supply analog input logic input analog input supply logic input Description ground battery supply voltage for DCS1800/PCS1900 section battery supply voltage for GSM850/EGSM900 section DCS1800/PCS1900 transmit RF input RF power control enable input RF power control input stabilized supply voltage Low-Band (LB) (GSM850/EGSM900) or High-Band (HB) (DCS1800/PCS1900) select input not connected GSM850/EGSM900 transmit RF input GSM850/EGSM900 transmit RF output DCS1800/PCS1900 transmit RF output ground
RFI_HB TXON PC VSTAB BAND n.c. RFI_LB RFO_LB RFO_HB
[1]
Pins 2, 3, 11 and 12 (VBAT) are not internally connected and must all be connected to the battery supply voltage.
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Preliminary data sheet
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BGY288
Power amplifier with integrated control loop
3. Ordering information
Table 2: Ordering information Package Name BGY288 Description leadless surface mounted package; plastic cap; 16 terminations Version SOT775A Type number
4. Block diagram
850 MHz and 900 MHz POWER AMPLIFIER RFI_LB 10 OUTPUT MATCHING 14
RFO_LB
BIASING
POWER SENSE
POWER CONTROLLER 6
PC
VSTAB TXON
7 5
(1) (1)
LOGIC CONTROL
BGY288
BAND
8 POWER SENSE
BIASING
RFI_HB
4
OUTPUT MATCHING 1800 MHz and 1900 MHz POWER AMPLIFIER
16
RFO_HB
001aab846
(1) Pull-down resistor.
Fig 2. Block diagram
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Preliminary data sheet
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Philips Semiconductors
BGY288
Power amplifier with integrated control loop
5. Functional description
5.1 Operating conditions
The BGY288 is designed to meet the 3GPP TS 45.005 technical specification for the ETSI.
5.2 Power amplifier
The low band (GSM850 and EGSM900) and the high band (DCS1800 and PCS1900) channel power amplifiers each comprises three cascaded gain stages, input and output matching and harmonic filters. The output power of each amplifier is determined by the bias on each of its 3 gain stages and is controlled by an internal signal generated in the power controller block. Each power amplifier block generates a power sense signal which is routed internally to the power control block.
5.3 Control logic
The control logic block generates the various signals to control the complete BGY288 depending on the signal levels on pins TXON and BAND, as indicated in Table 3. The control logic block supply voltage is via pin VSTAB. When pin VSTAB = 0 V, the BGY288 is in Idle mode and the battery current consumption is almost zero. The power control block is enabled when pin TXON goes HIGH. The low band (GSM850/EGSM900) channel is enabled when pin BAND goes LOW and the high band (DCS1800/PCS1900) channel is enabled when pin BAND goes HIGH. Both TXON and BAND inputs have pull-down resistors of approximately 1 M.
5.4 Power controller
The main inputs to the power controller block are the RF power control signal via pin PC and the output power sense signal internally generated by each power amplifier block. The PC signal is the reference voltage for the requested level of output power, and is usually generated by an external digital-to-analog converter. The PC signal is buffered and compared with the output power sense signal. The resultant error signal is then amplified by one of two integrators, the selection of which being dependant on the level of the BAND signal. The output of the selected integrator is the internal signal which controls the biasing circuits of the selected channel.
5.5 Mode control
Table 3: Mode Idle Mode control Mode description VSTAB (V) TXON LOW BAND LOW HIGH or LOW LOW HIGH PC (V) < 0.15 < 0.15 < 2.5 < 2.5
power amplifier fully off; minimal leakage current 0
Standby control logic functioning; power amplifier off LB TX HB TX low-band transmit mode (GSM850/EGSM900) high-band transmit mode (DCS1800/PCS1900)
2.6 to 3 LOW 2.6 to 3 HIGH 2.6 to 3 HIGH
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BGY288
Power amplifier with integrated control loop
6. Timing
dB PL(LB), PL(HB)
+4 +1 -1 -6 (**)
-30 (***)
(*)
(147 bits)
10 s 8 s 10 s
7056/13 (542.8) s
10 s
8 s 10 s
t
VSTAB td1 TXON td4 BAND td2 PD(LB), PD(HB) td3 PC td8 td7 td5 td6
td9
001aab847
Fig 3. Timing diagram Table 4: Timing characteristics ZS = ZL = 50 ; PD(LB) = 0 dBm to 4 dBm / PD(HB) = -2 dBm to +2 dBm; VBAT = 3.1 V to 4.6 V; VSTAB = 2.6 V to 3.0 V; Tmb = -20 C to 85 C; = 1 : 8 to 4 : 8; unless otherwise specified. Symbol Parameter td1 td2 td3 td4 td5 td6 td7 td8 td9 delay time; VSTAB to high voltage before TXON goes HIGH delay time; RF signal on RFI_HB or RFI_LB before PC ramp-up delay time; PC start of ramp-up after TXON goes HIGH delay time; TXON to LOW after transition of PC to off condition delay time; VSTAB to 0 V, after TXON goes LOW delay time; change of BAND after TXON goes LOW delay time; removal of RF signal on RFI_HB or RFI_LB after transition of PC to off condition time between PC ramp-up and actual PL increase Min 0 0 10 0 10 0 0 Typ Max Unit 3 s s s s s s s s s
delay time; BAND to LOW or HIGH before TXON goes HIGH 0
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Philips Semiconductors
BGY288
Power amplifier with integrated control loop
6.1 Ramp-up
VSTAB voltage must be available at minimum td1 before TXON goes HIGH (power control loop activates). BAND selects the correct transmit channel (GSM850/EGSM900, or DCS1800/PCS1900). BAND must be at the correct value before the rising edge of TXON. The transition of TXON to HIGH enables the power control loop; the TXON minimum td4 period is a set-up time which allows the correct internal biasing conditions and the charge on the integration capacitors to be at the correct starting value before PC starts to increase. RF power must be present at the input of the selected channel (PD(LB) or PD(HB)) before PC starts to ramp-up. The required RF output power level is reached by increasing PC in steps to the corresponding voltage level. The sequence of PC steps can be chosen to have approximately a quarter cosine wave ramp-up of PL(LB) or PL(HB) in order to prevent violation of the GSM power mask, and at the same time prevent violation of the spectrum due to transients. To avoid violation of the lowest power level in the GSM power mask (indicated by *; see Figure 3), the BGY288 provides sufficient isolation when TXON goes HIGH with PC at minimum value and RF power at input of power amplifier. In LB TX mode, the system specification for maximum output power of the handset is -36 dBm. In HB TX mode, the system specification for maximum output power of the handset is -48 dBm. In BGY288 transmit mode, the handset antenna switch can be used to provide isolation between the power amplifier and the antenna by setting the antenna switch to Rx mode. This condition is used for the transmit mode isolation parameters given in Section 9.
6.2 Ramp-down
PC steps down from the voltage level for the current power level to off state. The sequence of PC steps can be chosen to have approximately a quarter cosine wave ramp-down of PL(LB) or PL(HB) in order to prevent violation of the GSM power mask, and at the same time prevent violation of the spectrum due to transients. The power control loop can be switched off (TXON goes LOW) as soon as PC has reached the off state level. At the same time, BAND is allowed to change polarity and the RF input power at the selected channel (PD(LB) or PD(HB)) can be removed. When input power is removed, there is no additional isolation specification required to meet the GSM system specification. In LB TX mode, the system specification for maximum output power of the handset is -54 dBm. In HB TX mode the system specification for maximum output power is -48 dBm. At minimum td6 after TXON goes LOW (power control loop deactivates) and when all charge in the power control loop capacitors is removed, the BGY288 can go into Idle mode (VSTAB = 0 V).
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BGY288
Power amplifier with integrated control loop
7. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VBAT VSTAB ISTAB VPC IPC PD(HB), PD(LB) PL(LB) PL(HB) VBAND IBAND VTXON ITXON PBAT IBAT Tstg Tmb Vesd Parameter DC supply voltage stabilized DC supply voltage stabilized supply current DC output power control voltage current into output power control input input drive power on RFI_HB or RFI_LB load power on RFO_LB load power on RFO_HB band switch voltage band switch current transmit control signal current into transmit control input power from supply during pulse current from supply during pulse storage temperature mounting base temperature electrostatic discharge voltage =2:8 =4:8 human body model machine model
[1] [2] Class 1B according to EIA/JESD22-A114B Class A according to EIA/JESD22-A115A
[1] [2]
Conditions Idle mode HB TX or LB TX mode
Min -0.5 -2 -0.5 -2 -0.5 -2
Max 7 5.3 +3.3 2 3 +2 10 37 35 +3.3 +2 +3.3 +2 4 7 1.6 2.2 +100 +100 +90 500 50
Unit V V V mA V mA dBm dBm dBm V mA V mA W W A A C C C V V
HB TX mode LB TX mode HB TX mode LB TX mode
-40 -30 -30 -
8. Static characteristics
Table 6: Static characteristics ZS = ZL = 50 ; PD(HB), PD(LB) = 0 mW; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; unless otherwise specified. Symbol VBAT Parameter battery supply voltage typical operating range
[2]
Conditions
[1]
Min 2.9 3.1 4.6 2.6 0
Typ 3.6 2.8 -
Max 3.1 4.6 5.2 1.5 10 3.0 0.2
Unit V V V mA A V V
Voltage supply
IBAT VSTAB
leakage current supply voltage
Standby mode Idle mode Standby, HB TX or LB TX mode Idle mode
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BGY288
Power amplifier with integrated control loop
Table 6: Static characteristics ...continued ZS = ZL = 50 ; PD(HB), PD(LB) = 0 mW; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; unless otherwise specified. Symbol ISTAB Parameter current consumption BAND [3] 0 1.4 0 -100 4 4 1.2 0.5 3 3 15 2.5 V V A A pF V A pF M Conditions HB TX or LB TX mode Standby mode Digital inputs: TXON, VIL VIH IIL IIH Ci VPC IPC CPC RPC
[1] [2] [3]
Min -
Typ -
Max 1 1
Unit mA mA
LOW-level input voltage HIGH-level input voltage LOW-level input current HIGH-level input current input capacitance power control voltage power control current PC input capacitance PC input resistance
Analog inputs: PC [3]
Power amplifier is functional from 2.9 V to 3.1 V, but will not meet all electrical specification points. Power amplifier is functional from 4.6 V to 5.2 V under 50 conditions, but will not meet all electrical specification points. PD(LB) = 0 dBm to 4 dBm / PD(HB) = -2 dBm to +2 dBm; VBAT = 3.1 V to 4.6 V; VSTAB = 2.6 V to 3.0 V; Tmb = -20 C to +85 C; = 1 : 8 to 4 : 8; unless otherwise specified.
9. Dynamic characteristics
Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; = 1 : 8 to 4 : 8; tp = 575 s to 2300 s; PD(LB) = 2 dBm; spurious signals on PD(LB) < -50 dBm; LB TX mode selected; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified. Symbol PD(LB) VPC Parameter RF input power reference voltage to set output power f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850; PL(LB) = 35 dBm f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850; PL(LB) = 3 dBm Conditions Min 0 Typ 2 Max 4 2 Unit dBm V
0.2
-
-
V
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BGY288
Power amplifier with integrated control loop
Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode ...continued ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; = 1 : 8 to 4 : 8; tp = 575 s to 2300 s; PD(LB) = 2 dBm; spurious signals on PD(LB) < -50 dBm; LB TX mode selected; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified. Symbol PL(LB) Parameter available output power Conditions GSM850 VPC = 2.2 V VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; = 2 : 8 VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; = 2 : 8; Tmb = 85 C EGSM900 VPC = 2.2 V VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; = 2 : 8 VPC = 2.0 V; VBAT = 3.2 V; PD(LB) = 0 dBm; = 2 : 8; Tmb = 85 C efficiency GSM850 efficiency EGSM900 PL(LB) output power variation at nominal temperature range saturated power PL(LB) = 34 dBm saturated power PL(LB) = 34 dBm PL(LB) = 31 dBm to 34 dBm for EGSM900 and PL(LB) = 31 dBm to 33 dBm for GSM850; set by PC PL(LB) = 13 dBm to 31 dBm; set by PC PL(LB) = 6 dBm to 13 dBm; set by PC output power variation at extreme temperature range PL(LB) = 31 dBm to 34 dBm for EGSM900 and PL(LB) = 31 dBm to 33 dBm for GSM850; set by PC PL(LB) = 13 dBm to 31 dBm; set by PC PL(LB) = 6 dBm to 13 dBm; set by PC output power variation of frequency H2 to H13 harmonics isolation H2 into DCS1800/PCS1900 isolation H3 into DCS1800/PCS1900 isolation PL(LB) = 31 dBm to 34 dBm; set by PC PL(LB) 34 dBm measured at RFO_HB; PL(LB) = 34 dBm measured at RFO_HB; PL(LB) = 34 dBm PD(LB) = 4 dBm; VPC = 0.15 V; Standby mode PD(LB) = 4 dBm; VPC = 0.15 V; LB TX mode VSWRin input VSWR PL(LB) < 6 dBm PL(LB) = 6 dBm to 34 dBm;
[1] [2]
Min 34.2 32.8 32.3
Typ 35 -
Max -
Unit dBm dBm dBm
35.2 33.8 33.3 -0.7
36 50 45 55 50 -
+0.7
dBm dBm dBm % % % % dB
[1] [2] [1] [2] [1] [3]
-1.5 -2 -1.2
-
+1.5 +2 +1.2
dB dB dB
[1] [3] [1] [3] [1] [4]
-2 -3 -0.3 -
2:1
+2 +3 +0.3 -5 -15 -25 -36 -36 6:1 3:1
dB dB dB dBm dBm dBm dBm dBm
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Philips Semiconductors
BGY288
Power amplifier with integrated control loop
Table 7: Dynamic characteristics GSM850 and EGSM900 transmit mode ...continued ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; = 1 : 8 to 4 : 8; tp = 575 s to 2300 s; PD(LB) = 2 dBm; spurious signals on PD(LB) < -50 dBm; LB TX mode selected; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified. Symbol Pn Parameter noise power Conditions RBW = 100 kHz; f0 = 897.5 MHz for EGSM900; f0 = 836.5 MHz for GSM850 f0 + 27.5 MHz; PL(LB) < 34 dBm f0 + 37.5 MHz; PL(LB) < 34 dBm f 1805 MHz; PL(LB) < 34 dBm CG conversion gain f0 = 915 MHz for EGSM900; f0 = 849 MHz for GSM850; PL(LB) = 6 dBm to 34 dBm; fSS1 = f0 - 20 MHz; PSS1 = -40 dBm; CG = PL(CON) - PSS1; see Figure 4 f0 = 915 MHz for EGSM900; f0 = 849 MHz for GSM850; PL(LB) = 6 dBm to 34 dBm; fSS2 = f0 + 20 MHz; PSS2 = -40 dBm; SSG = PL(SS2) - PSS2; see Figure 4 PL(LB) = 6 dBm to 34 dBm; 6.5 % AM modulation with fmod = 67 kHz at RFI_LB fmod = 140 kHz at RFI_LB fmod = 271 kHz at RFI_LB AM/PM AM/PM conversion maximum control slope tr, tf fCL carrier rise and fall time control loop bandwidth stability ruggedness PL(LB) 34 dBm; VSWR 7 : 1 through all phases; VBAT = 3.2 V to 4.6 V VBAT = 3.2 V to 4.6 V; PL(LB) 34 dBm; = 4 : 8; VSWR 8 : 1 through all phases PD(LB) = 1.5 dBm to 2.5 dBm; PL(LB) = 6 dBm to 34 dBm PL(LB) = 6 dBm to 34 dBm PL(LB) = 5 dBm to 34 dBm or 34 dBm to 5 dBm 5 8 14 2 200 8 13 20 4 200 2 -36 % % % deg/dB dB/V s kHz dBm -73 -82 -77 28 dBm dBm dBm dB Min Typ Max Unit
SSG
small signal gain
-
-
31
dB
AM/AM
AM/AM conversion
no degradation
[1] [2] [3] [4]
Condition to set VPC: VBAT = 3.6 V; = 2 : 8; PD(LB) = 2 dBm; Tmb = 25 C; f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850. Conditions for power variation: PD(LB) = 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; Tmb = 15 C to 70 C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V 20 mV. Conditions for power variation: PD(LB) = 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; Tmb = -20 C to +90 C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V 20 mV. Conditions for power variation: PD(LB) = 2 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; Tmb = 25 C; VBAT = 3.6 V; VSTAB = 2.8 V 20 mV.
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BGY288
Power amplifier with integrated control loop
Table 8: Dynamic characteristics DCS1800/PCS1900 transmit mode ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; = 1 : 8 to 4 : 8; tp = 575 s to 2300 s; PD(HB) = 0 dBm; spurious signals on PD(HB) < -50 dBm; HB TX mode selected; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise specified. Symbol PD(HB) VPC Parameter RF input power reference voltage to set output power f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900; PL(HB) = 32.5 dBm f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900; PL(HB) = -3 dBm PL(HB) available output power VPC = 2.2 V VPC = 2.0 V; VBAT = 3.2 V; PD(HB) = -2 dBm; = 2 : 8 VPC = 2.0 V; VBAT = 3.2 V; PD(HB) = -2 dBm; = 2 : 8; Tmb = 85 C efficiency DCS1800 efficiency PCS1900 PL(HB) output power variation at nominal temperature range saturated power PL(HB) = 31.3 dBm saturated power PL(HB) = 31.3 dBm PL(HB) = 28 dBm to 32 dBm; set by PC PL(HB) = 15 dBm to 28 dBm; set by PC PL(HB) = 5 dBm to 15 dBm; set by PC PL(HB) = 0 dBm to 5 dBm; set by PC output power variation at extreme temperature range PL(HB) = 28 dBm to 32 dBm; set by PC PL(HB) = 15 dBm to 28 dBm; set by PC PL(HB) = 5 dBm to 15 dBm; set by PC PL(HB) = 0 dBm to 5 dBm; set by PC output power variation of frequency H2 to H7 harmonics isolation PL(HB) = 30 dBm to 32 dBm; set by PC PL(HB) 32 dBm PD(HB) = 2 dBm; VPC = 0.15 V; Standby mode PD(HB) = 2 dBm; VPC = 0.15 V; HB TX mode VSWRin Pn input VSWR noise power PL(HB) < 0 dBm PL(LB) = 2 dBm to 32 dBm f0 = 1785 MHz for DCS1800; f0 = 1910 MHz for PCS1900; f0 + 20 MHz; RBW = 100 kHz; PL(HB) < 32 dBm f0 = 1785 MHz for DCS1800; f0 = 1 910 MHz for PCS1900; PL(HB) = 0 dBm to 32 dBm; fSS1 = f0 - 20 MHz; PSS1 = -40 dBm; CG = PL(CON) - PSS1; see Figure 4
[1] [2] [1] [2] [1] [2] [1] [2] [1] [3] [1] [3] [1] [3] [1] [3] [1] [4]
Conditions
Min -2 -
Typ 0 -
Max +2 2
Unit dBm V
0.2
-
-
V
32.7 31.8 31.3 -0.7 -1 -2 -3 -1.2 -1.5 -2.5 -3.5 -0.3 -
33.5 50 45 50 45 2:1 -
+0.7 +1 +2 +3 +1.2 +1.5 +2.5 +3.5 +0.3 -5 -36 -36 6:1 3:1 -77
dBm dBm dBm % % % % dB dB dB dB dB dB dB dB dB dBm dBm dBm
dBm
CG
conversion gain
-
-
25
dB
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Philips Semiconductors
BGY288
Power amplifier with integrated control loop
Table 8: Dynamic characteristics DCS1800/PCS1900 transmit mode ...continued ZS = ZL = 50 ; VBAT = 3.6 V; VSTAB = 2.8 V; Tmb = 25 C; = 1 : 8 to 4 : 8; tp = 575 s to 2300 s; PD(HB) = 0 dBm; spurious signals on PD(HB) < -50 dBm; HB TX mode selected; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise specified. Symbol SSG Parameter small signal gain Conditions f0 = 1785 MHz for DCS1800; f0 = 1 910 MHz for PCS1900; PL(HB) = 0 dBm to 32 dBm; fSS2 = f0 + 20 MHz; PSS2 = -40 dBm; SSG = PL(SS2) - PSS2; see Figure 4 PL(HB) = 0 dBm to 32 dBm; 6.5 % AM modulation with fmod = 67 kHz at RFI_HB fmod = 140 kHz at RFI_HB fmod = 271 kHz at RFI_HB AM/PM AM/PM conversion maximum control slope tr, tf fCL carrier rise and fall time control loop bandwidth stability ruggedness PL(HB) 32 dBm; VSWR 7 : 1 through all phases; VBAT = 3.2 V to 4.6 V VBAT = 3.2 V to 4.6 V; PL(HB) 32 dBm; = 4 : 8; VSWR 8 : 1 through all phases PD(HB) = -0.5 dBm to +0.5 dBm; PL(HB) = 0 dBm to 32 dBm PL(HB) = 0 dBm to 32 dBm PL(HB) from 0 dBm to 32 dBm and from 32 dBm to 0 dBm 5 8 14 2 200 8 13 20 4 200 2 -36 % % % deg/dB dB/V s kHz dBm Min Typ Max 33 Unit dB
AM/AM
AM/AM conversion
no degradation
[1] [2] [3] [4]
Condition to set VPC: VBAT = 3.6 V; = 2 : 8; PD(HB) = 0 dBm; Tmb = 25 C; f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900. Conditions for power variation: PD(HB) = -2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; Tmb = 15 C to 70 C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V 20 mV. Conditions for power variation: PD(HB) = -2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; Tmb = -20 C to +90 C; VBAT = 3.2 V to 4.2 V; VSTAB = 2.8 V 20 mV. Conditions for power variation: PD(HB) = 0 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; Tmb = 25 C; VBAT = 3.6 V; VSTAB = 2.8 V 20 mV.
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12 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
P
PD POWER AMP PSS1
P PL(SS1)
PL
PL(CON)
fSS1 f0
f CG = PL(CON) - PSS1
fSS1
f0 2f0 - fSS1
f
001aaa701
a. Conversion gain (CG)
P P POWER AMP PSS2 PL PL(SS2)
PD
f0 fSS2
f SSG = PL(SS2) - PSS2
f0
fSS2
f
001aaa702
b. Small signal gain (SSG)
The total noise at the output of the power amplifier is the summation of three sources: The noise present at the input of the power amplifier at fSS1 amplified by the conversion gain. The noise present at the input of the power amplifier at fSS2 amplified by the small signal gain. The noise generated by the power amplifier itself, when the noise at the input of the power amplifier is zero.
Fig 4. Input and output signals
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
13 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
10. Application information
VBAT
C10
C2
C3
C4 L1 RFI_HB 4 5 R2 PC C1 R3 VSTAB R4 BAND 8 9 L2 RFI_LB C6 10 11 12 7 6 3 2 1
C5
R1 TXON
L3 16 15 RFO_HB
BGY288
L4 14 13
001aab848
RFO_LB
C7
C8
C9
C11 VBAT
Drive signals must not be applied to pin 9. Components listed in Table 9.
Fig 5. Test circuit
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
14 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
VBAT
CON1 RFI_HB
C10 C2 C3
CON3 RFO_HB
C4
C5
R1 R2 CON5 R3 R4 R5 C1
BGY288
CON2 RFI_LB
C6
C7
CON4 RFO_LB
C8 C11
C9
VBAT CON6
001aab849
Components listed in Table 9.
Fig 6. Printed-circuit board test circuit Table 9: PCB CON1, CON2, CON3, CON4 CON5 CON6 C1 C2, C3, C8, C9 C4, C5 C6, C7 C10, C11 R1, R3, R4, R5 R2 L1, L2, L3, L4
[1] [2]
List of components Description printed-circuit board jack assembly end launch SMA connector DC connector 5 pin solder ring SMD capacitor SMD capacitor SMD capacitor SMD capacitor electrolytic capacitor [1] SMD resistor SMD resistor stripline [2] 2.7 nF 100 nF 10 pF 33 pF 47 F; 35 V 0 1 k; 0.1 W Z0 = 50 0605 size 0603 size width 1.4 mm 0603 size 0805 size 0603 size 0603 size Matsushita Value PB005H1 142-0701-881 Dimensions Supplier Roland Haefele Johnson Components
Component
C10 and C11 smooth the DC supply voltage (VBAT). The striplines are on a double etched printed-circuit board (r = 4.6); thickness 0.8 mm.
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
15 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
11. Package outline
Leadless surface mounted package; plastic cap; 16 terminations
ZD2 (10x) ZD1 (10x) Z3 4 5 ZE1 (10x) Z4
SOT775A
e2 (2x) 1
e (2x) 2
e1 (12x) 3
Z (8x)
ZE2 (10x)
16
6 Z2 L (16x) Z6 (36x)
15
7
14
8
13 b1 (2x)
12
11
10
9 b (14x) Z1 Dimensions solder resist Z5 (36x)
D D1 A y c
E1 pin 1 index
E
0
5 scale
10 mm
Z5 0.6
Z6 0.6
ZD1 0.3
ZD2 0.6
ZE1 0.3
ZE2 0.6
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.6 b 0.6 b1 0.9 c 0.56 D 8.2 7.8 D1 7.95 7.65 E 8.2 7.8 E1 7.95 7.65 e 1.55 e1 1.7 e2 1.85 L 0.6 y max. 0.1 Z 0.9 Z1 1 Z2 1.2 Z3 1.7 Z4 1.6
Note 1. General tolerance 0.050 mm, unless specified otherwise. OUTLINE VERSION SOT775A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-10-10
Fig 7. Package outline SOT775A
9397 750 14011 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
16 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
12. Soldering Recommendations
12.1 Reflow profile
The BGY288 is a laminate-based power amplifier module in a Leadless Grid Array (LGA) package. The module can be assembled using a standard Surface Mount Technology (SMT) reflow process in a convection or IR-oven. The minimum and maximum limits of the temperature profile are shown in Figure 8. The actual profile has to be within these limits, and will depend on the printed-circuit board material, the number and size of the components to be assembled, and the type of solder which is being used.
temperature TP
TR TE(max) TE(min)
tE
tR
t
001aaa705
Fig 8. Recommended reflow temperature profile
It is recommended to use a standard no-clean solder paste like SnPb for profiles having leads containing solder, or SnAgCu for lead-free assembly processes. The parameters and corresponding values for SnPb and SnAgCu solder are given in Table 10.
Table 10: Symbol TE tE TR tR TP Reflow soldering parameters parameter temperature gradient pre-heat (soak) temperature pre-heat time reflow temperature reflow time maximum peak temperature temperature gradient time 25 C to peak temperature SnPb Solder 3 100 to 150 60 to 120 > 183 60 to 150 240 <5 6 minutes max. SnAgCu solder 3 150 to 200 60 to 180 > 217 60 to 150 260 <5 8 minutes max. Unit C/s C s C s C C/s
12.2 Printed-circuit board layout
The printed-circuit board footprint layout is a copy of the metal pattern on the underside of the LGA package. It is recommended that the printed-circuit board is designed with a large ground plane, and that the solder lands of the ground plane solder mask are defined as shown in Figure 9.
9397 750 14011 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
17 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
12.3 Stencil design
The recommended dimensions of the solder stencil are given in Figure 9 and are based on a stencil thickness of 125 m. Using a thinner or thicker stencil will require the stencil aperture dimensions to be adjusted.
12.4 Rework
If rework is required, it is recommended that a BGA rework station with a programmable top and bottom heater is used. The first step of the rework process is to pre-heat the printed-circuit board with the bottom heater of the rework station. When the board has reached the pre-heat temperature, the top heater can be used to increase the temperature above the melting point of the solder. The component which has to be replaced can be picked up with a vacuum nozzle. Before placing a new component the remaining solder on the board must be removed. Fresh solder can be dispensed, a new component placed, and the board heated as described previously.
12.5 Moisture sensitivity level
The BGY288 is tested according to the JEDEC standard JESD 22-A113C. The BGY288 is classified on MSL3 for a lead soldering profile with a peak temperature of 240 C, and on MSL4 for a lead-free soldering profile with a peak temperature of 260 C.
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
18 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
7.40 1.10 0.60 0.90 B A 0.60 1.10 C 0.80 0.60 1.10 0.60 1.10 0.60
1.10 7.40 1.10 0.30 0.60 5.40
1.10
0.60
0.30 solder lands 0.40 solder stencil opening DIMENSIONS in mm 0.60 0.57 0.90 0.85 0.60 0.55 5.20 0.60
0.60 0.57
0.60 0.57
0.60 0.55
detail A (14x)
detail B (2x)
detail C (36x)
mgx467
Fig 9. Footprint layout and solder stencil design
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
19 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
13. Revision history
Table 11: BGY288_1 Revision history Release date 20050202 Data sheet status Preliminary data sheet Change notice Doc. number 9397 750 14011 Supersedes Document ID
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
20 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
14. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
15. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. ICs with GSM or 3G functionality -- Purchase of a Philips IC with GSM functionality does not convey an implied license under any patent right on the GSM or 3G Standard. A license for the Philips portfolio of GSM and 3G patents needs to be obtained via Philips Intellectual Property & Standards (www.ip.philips.com), e-mail: info.licensing@philips.com.
16. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14011
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 2 February 2005
21 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
18. Contents
1 1.1 1.2 1.2.1 1.2.2 1.3 2 2.1 2.2 3 4 5 5.1 5.2 5.3 5.4 5.5 6 6.1 6.2 7 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General features . . . . . . . . . . . . . . . . . . . . . . . . 1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Operating conditions. . . . . . . . . . . . . . . . . . . . . 4 Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 4 Control logic . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Power controller . . . . . . . . . . . . . . . . . . . . . . . . 4 Mode control . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Ramp-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ramp-down . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 7 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Application information. . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Soldering Recommendations . . . . . . . . . . . . . 17 Reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . 17 Printed-circuit board layout . . . . . . . . . . . . . . . 17 Stencil design . . . . . . . . . . . . . . . . . . . . . . . . . 18 Rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Moisture sensitivity level . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information . . . . . . . . . . . . . . . . . . . . 21
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 February 2005 Document number: 9397 750 14011
Published in The Netherlands

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