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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 3.0 1.6 0.25 MAX. 1500 700 5 8 45 5.0 2.0 0.5 UNIT V V A A W V A V s Ths 25 C IC = 3.0 A; IB = 0.79 A IF = 3.0 A ICsat = 3.0 A; IB(end) = 0.67 A PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 5 8 3 5 100 4 45 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Ths 25 C 1 Turn-off current. September 1997 1 Rev 1.400 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 32 MAX. 3.7 2.8 UNIT K/W K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 Emitter cut-off current Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 3.0 A; IB = 0.79 A IC = 3.0 A; IB = 0.79 A IC = 0.3 A; VCE = 5 V IC = 3.0 A; VCE = 5 V IF = 3.0 A MIN. 95 7.5 700 3.8 TYP. 13.5 55 12 5.5 1.6 MAX. 1.0 2.0 208 5.0 1.1 7.5 2.0 UNIT mA mA mA V V V V V DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 3.0 A; LC = 1.35 mH; CFB = 9.4 nF; IB(end) = 0.67 A; LB = 8 H; -VBB = 4 V; (-dIB/dt = 0.45 A/s) TYP. 47 MAX. UNIT pF 4.5 0.25 6.0 0.5 s s 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.400 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF TRANSISTOR IC DIODE ICsat 100 h FE t Tj = 25 C Tj = 125 C 5V IB IBend t 20us 26us 64us 10 1V VCE t 1 0.01 0.1 IC / A 1 10 Fig.1. Switching times waveforms. Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C ICsat 90 % IC 1.2 1.1 1 0.9 10 % tf ts IB IBend t 0.8 0.7 0.6 IC/IB = 3 4 5 t 0.5 0.4 0.1 1 IC / A 10 - IBM Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB VCESAT / V IC/IB = 5 4 3 + 150 v nominal adjust for ICsat 1 0.9 0.8 Lc 0.7 0.6 0.5 D.U.T. IBend LB Cfb Rbe 0.4 0.3 0.2 Tj = 25 C Tj = 125 C -VBB 0.1 0 0.1 1 IC / A 10 Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB September 1997 3 Rev 1.400 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF 1.2 1.1 1 0.9 0.8 0.7 0.6 VBESAT / V 10 ts, tf / us 9 8 7 6 5 ts Tj = 25 C Tj = 125 C IC = 4A 3A 2.5A 4 3 2 1 0 2.5A IC = 3A tf 0.1 1 10 0 1 2 3 IB / A 4 IB / A Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC VCESAT / V Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C Normalised Power Derating with heatsink compound 10 120 110 PD% IC = 2.5A 3A 4A 1 Tj = 25 C Tj = 125 C 100 90 80 70 60 50 40 30 20 10 0 0.1 0.1 1 IB / A 10 0 20 40 60 80 Ths / C 100 120 140 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC Eoff / uJ 1000 Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) IC = 3A 100 2.5A 10 0.1 1 IB / A 10 Fig.9. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC September 1997 4 Rev 1.400 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF IC / A 100 100 IC / A = 0.01 = 0.01 ICM max 10 IC max II tp = 10 ICM max tp = 10 us IC max II 10 us 1 Ptot max 100 us 1 Ptot max 100 us 1 ms I I 1 ms 0.1 0.1 10 ms DC 10 ms DC 0.01 1 10 100 VCE / V 1000 0.01 1 10 100 VCE / V 1000 Fig.12. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. Fig.13. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 5 newton force on the centre of the envelope. September 1997 5 Rev 1.400 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.14. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.400 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.400 |
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