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| Variable Capacitance Diodes MA2J372 Silicon epitaxial planar type Unit : mm For UHF and VHF electronic tuners I Features * Large capacitance ratio * Small series resistance rD * S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package (Flat type) INDICATES CATHODE 0.4 0.15 1 2 0.4 0.15 1.7 0.1 2.5 0.2 Parameter Reverse voltage (DC) Peak reverse voltage* Forward current (DC) Junction temperature Storage temperature Note) * : RL = 2.2 k Symbol VR VRM IF Tj Tstg Rating 32 34 20 150 -55 to +150 Unit V V mA C C 0.9 0.1 1 : Anode 2 : Cathode S-Mini Type Package (Flat 2-pin) Marking Symbol: 6N I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(25V) CD(10V) CD(17V) Capacitance ratio CD(2V)/CD(25V) CD(10V)/CD(17V) Diode capacitance deviation Series resistance* C rD CD(2V)(10V)(17V)(25V) CD = 9 pF, f = 470 MHz VR = 30 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 10 V, f = 1 MHz VR = 17 V, f = 1 MHz 14.220 2.132 5.307 2.909 6.22 1.70 1.96 2 0.45 Conditions Min Typ Max 10 15.473 2.321 6.128 3.411 Unit nA pF pF pF pF % Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 - 0.06 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.45 - 0.05 + 0.1 1.25 0.1 1 MA2J372 CD VR 100 f = 1 MHz Ta = 25C 120 Variable Capacitance Diodes IF V F 1.03 CD Ta 50 100 1.02 Diode capacitance CD (pF) VR = 2 V 10 V 17 V 25 V 30 20 Forward current IF (mA) 10 60 25C - 40C CD(Ta) CD(Ta = 25C) 80 Ta = 60C 1.01 1.00 5 3 2 40 0.99 20 0.98 1 0 0 4 8 12 16 20 24 28 32 36 40 0 0.2 0.4 0.6 0.8 1.0 1.2 0.97 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (C) 100 IR T a Reverse current IR (nA) 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (C) 2 |
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