 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W - 28V - 500MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2 * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 175W 70V 20V 10A -65 to 150C 200C 9/99 D1008UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 80W VDS = 28V f = 400MHz IDQ = 0.4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A 1 1.6 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ. Max. Unit V 2 1 7 mA A V S dB % -- 120 60 5 pF pF pF VGS(th) Gate Threshold Voltage * TOTAL DEVICE VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance PER SIDE VDS = 28V VDS = 28V VDS = 28V * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.0C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 9/99 D1008UK 125 100 125 17 100 80 100 f1 = 400.0MHz 15 P out W 75 60 50 f1 = 400MHz Idq = 0.4A VDS = 28V 40 Drain Efficiency % P out W 75 Idq = 0.4A VDS = 28V 13 Gain dB 50 11 25 20 25 9 0 0 4 8 P in W 12 16 Pout Drain Efficiency 0 20 0 0 4 8 P in W 12 16 Pout Gain 7 20 Figure 1 - Power Output and Efficiency vs. Power Input. -15 -20 -25 IMD3 dBc Figure 2 - Power Output & Gain vs. Power Input. D1008UK OPTIMUM SOURCE AND LOAD IMPEDANCE f1 = 400.0MHz f2 = 400.1MHz VDS = 28V IDQ = 0.8A -30 -35 -40 -45 -50 0 20 40 P out W PEP Frequency MHz 400 80 ZS ZL 1.5 + j0.2 5.0 + j2.0 60 Figure 3 - IMD vs. Output Power. Typical S Parameters ! # !Freq MHz 100 200 300 400 500 600 700 800 900 1000 Vds=28V, Idq=1A MHz S MA R 50 S11 mag 0.794 0.881 0.923 0.923 0.937 0.952 0.966 0.966 0.977 0.966 ang -158 -167 -171 -176 -179 177 174 171 167 165 S21 mag 14.622 5.821 3.02 1.82 1.439 1.057 0.676 0.543 0.447 0.359 ang 69 42 28 18 15 13 10 5 1 1 S12 mag 0.0115 0.0061 0.0068 0.117 0.0168 0.0234 0.0285 0.0335 0.0394 0.0432 ang -7 3 60 77 76 75 74 69 64 64 S22 mag 0.61 0.794 0.871 0.902 0.923 0.945 0.966 0.955 0.966 0.955 ang -145 -156 -162 -167 -169 -171 -174 -177 178 178 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 9/99 D1008UK GATE BIAS 1nF 6.8K 100K 1nF 6 x 3.5mm contact pad 100pF T1 INPUT L1 2-18pF 6 x 3.5mm contact pad T2 T4 100pF L3 L4 +28V 10 6.8K 1nF 100uF OUTPUT T6 1-3.5pF D1008 T3 T5 L2 D1008 100pF 6 x 3.5mm contact pad 6 x 3.5mm contact pad 100pF D1008UK TEST FIXTURE Substrate 1.6mm PTFE/glass, Er=2.5 All microstrip lines W=4.4mm T1 T2,T3 T4,T5 T6 70mm 85mm 100mm 70mm 50 25 15 50 UT34 SEMI RIGID COAX UT70-25 SEMI RIGID COAX UT85-15 SEMI RIGID COAX UT85 SEMI RIGID COAX L1 L2 L3 L4 3.5 turns of 24swg ECW, 3mm ID 5.5 turns of 24swg ECW, 4mm ID 4 turns of 21swg ECW, 7mm ID 3 turns of 21swg ECW on Fair-Rite FT50-75 core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 9/99 |
Price & Availability of D1008UK
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |