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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1123/D Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low-dropout linear regulation for switching-regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main features: * High Gain Limits Base-Drive Losses to only 1-2% of Circuit Output Current * Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts * Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25C Unless Otherwise Noted.) Rating Collector-Emitter Sustaining Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Base Current -- Continuous Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VCEO VCB VEB IC ICM IB PD TJ, Tstg Value 40 50 5.0 4.0 8.0 4.0 75 0.6 - 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C MJE1123 PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 seconds RJC RJA TL 1.67 70 275 C/W C CASE 221A-06 TO-220AB ELECTRICAL CHARACTERISTICS (TC = 25C Unless Otherwise Noted) Characteristic OFF CHARACTERISTICS* Collector-Emitter Sustaining Voltage (IC = 1.0 mA, I = 0) Emitter-Base Voltage (IE = 100 A) Collector Cutoff Current (VCE = 7.0 Vdc, IB = 0) (VCE = 20 Vdc, IB = 0) ON CHARACTERISTICS* Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 20 mAdc) (IC = 1.0 Adc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 120 mAdc) (IC = 2.0 Adc, IB = 50 mAdc) (IC = 2.0 Adc, IB = 120 mAdc) (IC = 4.0 Adc, IB = 120 mAdc) * Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. VCE(sat) -- -- -- -- -- -- 0.16 0.13 0.10 0.25 0.20 0.45 0.30 0.25 0.20 0.40 0.35 0.75 (continued) Vdc VCEO(sus) VEBO ICEO -- -- -- -- 100 250 40 7.0 65 11 -- -- Vdc Vdc Adc Symbol Min Typ Max Unit (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJE1123 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C Unless Otherwise Noted) Characteristic ON CHARACTERISTICS* (continued) Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 20 mAdc) (IC = 2.0 Adc, IB = 50 mAdc) (IC = 4.0 Adc, IB = 120 mAdc) DC Current Gain (IC = 1.0 Adc, VCE = 7.0 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) (IC = 2.0 Adc, VCE = 7.0 Vdc) (IC = 2.0 Adc, VCE = 10 Vdc) (IC = 4.0 Adc, VCE = 7.0 Vdc) (IC = 4.0 Adc, VCE = 10 Vdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) * Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 100 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) TJ = 25C 10 IB = 20 mA 50 mA 1 fT 5.0 11.5 -- MHz VBE(sat) -- -- -- hFE 100 100 75 80 45 45 VBE(on) -- -- -- 0.75 0.84 0.90 0.90 1.00 1.20 170 180 120 140 75 79 225 225 170 180 100 100 Vdc 0.77 0.87 1.00 0.95 1.20 1.40 -- Vdc Symbol Min Typ Max Unit 0.8 0.6 IC = 4 A, IB = 100 mA 1 100 mA 120 mA 0.4 IC = 2 A, IB = 50 mA 0.2 IC = 1 A, IB = 20 mA 0 20 40 60 TJ, CASE TEMPERATURE (C) 80 100 0.1 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. Saturation Voltage versus Collector Current as a Function of Base Drive 1.2 1.1 VBE(sat) , BASE-EMITTER SATURATION VOLTAGE (VOLTS) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 TJ = 25C Figure 2. Saturation Voltage versus Temperature IB = 20 mA VBE(S), BASE-EMITTER SATURATION VOLTAGE (VOLTS) 50 mA 120 mA 1.1 IC = 4 A, IB = 100 mA 1 0.9 IC = 2 A, IB = 50 mA 0.8 0.7 IC = 1 A, IB = 20 mA 0.6 20 40 60 80 100 1 IC, COLLECTOR CURRENT (AMPS) 10 TJ, CASE TEMPERATURE (C) Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage versus Temperature Motorola Bipolar Power Transistor Device Data 2 MJE1123 1000 TJ = 25C DC CURRENT GAIN GAIN CHANGE RELATIVE TO 25C (%) 40 VCE = 2, 7, or 10 V 30 100 VCE = 2 V 7V 10 V 10 0.1 20 TJ = 100C 10 50C 0 0.1 1 10 100 1 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain Figure 6. DC Current Gain Variation TYPICAL LOW PASS TRANSISTOR APPLICATION The MJE1123 was designed to operate as a low pass transistor in conjunction with the LT1123 offered by Linear Technology Corporation. Together they provide several excellent advantages: -- A dropout voltage below 50 mV at 1.0 amp, increasing to only 225 mV at 4.0 amps, typically. -- Line and load regulation are within 5.0 mV. -- Initial output accuracy is better than 1 percent. -- Full short circuit protection is included. -- Base drive loss is less than 2% of output current . . . even at 4.0 full amps output. -- The high gain and excellent collector-emitter saturation voltage make the combination better than monolithic devices. 600 5.6 V 10 F* 20 *REQUIRED IF DEVICE IS *MORE THAN 6 FROM MAIN *FILTER CAPACITOR. #REQUIRED FOR STABILITY #(LARGER VALUES INCREASE #STABILITY). MJE1123 DRIVE LT1123 FB GND 5V OUTPUT 10 F# TYPICAL REGULATOR DROPOUT VOLTAGE (VOLTS) 0.4 100 IC, COLLECTOR CURRENT (AMPS) TJ = 150C 10 5 ms DC 1 1 ms 0.3 0.2 0.1 0 0 1 2 3 4 5 REGULATOR CIRCUIT OUTPUT CURRENT (AMPS) 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Typical Dropout Voltage of a MJE1123 and LT1123 Circuit Figure 8. Maximum Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE1123 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 D = 0.02 D = 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) D = 0.5 D = 0.2 D = 0.1 D = 0.05 t1 t2 DUTY CYCLE, D = t1/t2 5 10 20 50 P(pk) RJC(t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 200 500 1K 0.01 0.01 Figure 9. Typical Thermal Response 4 Motorola Bipolar Power Transistor Device Data MJE1123 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 MJE1123 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJE1123/D* MJE1123/D |
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