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 7MBR20SC060
PIM/Built-in converter with thyristor and brake (S series) 600V / 20A / PIM
Features
* Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
* Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 20 40 20 69 600 20 20 40 69 600 800 800 20 225 125 800 20 140 98 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m
Brake
Inverter
Continuous 1ms 1 device
Thyristor
50Hz/60Hz sine wave Tj=125C, 10ms half sine wave
Converter
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter
7MBR20SC060
Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=20mA VGE=15V, Ic=20A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=20A VGE=15V RG=120 IF=20A chip terminal IF=20A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=20A, VGE=15V chip terminal VCC=300V IC=20A VGE=15V RG=120 VR=600V VDM=800V VRM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=20A chip terminal IF=20A chip terminal VR=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 50 200 5.5 7.8 8.5 1.8 1.95 2.4 2000 0.45 0.25 0.40 0.05 1.8 1.95 1.2 0.6 1.0 0.35 2.6 300 50 200 2.4 1.2 0.6 1.0 0.35 50 1.0 1.0 100 2.5 1.55 Unit A nA V V pF s
Min.
Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
V ns A nA V s
Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage
1.8 1.95 0.45 0.25 0.40 0.05
Brake
Thyristor
Converter
1.2 1.3 1.1 1.2 5000 495 3375
A mA mA mA V V V
Thermistor
Reverse current Resistance B value
1.5 50 520 3450
A K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.81 3.81 1.81 1.66 2.00 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)
7MBR20SC060
50
50
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)
VGE= 20V 15V 40
12V 40
VGE= 20V
15V
12V
Collector current : Ic [ A ]
30
Collector current : Ic [ A ]
30
20
20
10 10V
10 10V
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
50 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)
Tj= 25C 40
Tj= 125C
30
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
20
4
Ic= 40A 2 Ic= 20A Ic= 10A
10
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
5000 500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C
25
Capacitance : Cies, Coes, Cres [ pF ]
1000
300
15
200
10
Coes Cres 100
100
5
50 0 5 10 15 20 25 30 35
0 0 20 40 60 80 100
0 120
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
400
20
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR20SC060
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 125C
ton
ton toff
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
toff tr
tr
100
100
tf
tf
10 0 10 20 30 40
10 0 10 20 30 40
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=15V, Tj= 25C
5000 2.0
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120
ton
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff tr
Eon(125C) 1.5 Eoff(125C)
Eon(25C)
1.0 Eoff(25C)
100
tf
0.5 Err(125C)
Err(25C) 10 50 100 1000 0.0 0 10 20 30 40
Gate resistance : Rg [ ]
Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=15V, Tj= 125C
4 250
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=120, Tj<=125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon 200 3
Collector current : Ic [ A ]
150
2 Eoff
SCSOA (non-repetitive pulse) 100
1 50 RBSOA (Repetitive pulse) 0 50 100 Gate resistance : Rg [ ] 1000 0 200 400 600 800
Err 0
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR20SC060
[ Inverter ] Forward current vs. Forward on voltage (typ.)
50 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=120
40
Tj=125C
Tj=25C
100
trr(125C)
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
trr(25C)
30
Irr(125C) Irr(25C) 10
20
10
0 0 1 2 3
1 0 10 20 30 40
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
[ Converter ] Forward current vs. Forward on voltage (typ.)
50 50
[ Thyristor ] On-state current vs. On-state voltage (typ.)
Tj= 25C 40
Tj= 125C
Tjw= 125C
Tjw= 25C
30
Instantaneous on-state current [ A ]
0.4 0.8 1.2 1.6 2.0
Forward current : IF [ A ]
10
20
5
10
0 0.0
2 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Instantaneous on-state voltage [ V ]
Transient thermal resistance
10 200 100 FWD[Inverter]
[ Thermistor ] Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
Conv. Diode IGBT[Inverter&DB]
Thyristor 1
Resistance : R [ k ]
10
1
0.1
0.05 0.001
0.01
0.1
1
0.1 -60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [ C ]
IGBT Module
7MBR20SC060
50
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)
50
VGE= 20V 15V 40
12V 40
VGE= 20V
15V
12V
Collector current : Ic [ A ]
30
Collector current : Ic [ A ]
30
20
20
10 10V
10 10V
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
50 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)
Tj= 25C 40
Tj= 125C
30
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
20
4
Ic= 40A
10
2
Ic= 20A Ic= 10A
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
5000 500
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C
25
Capacitance : Cies, Coes, Cres [ pF ]
1000
300
15
200
10
Coes Cres 100
100
5
50 0 5 10 15 20 25 30 35
0 0 20 40 60 80 100
0 120
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
400
20
IGBT Module
Outline Drawings, mm
7MBR20SC060
Marking : White Marking : White
Equivalent Circuit Schematic
[ Converter ]
21 (P)
[ Thyristor ]
26
[ Brake ]
22(P1)
[ Inverter ]
[ Thermistor ]
8 25 20 (Gu) 18 (Gv ) 16 (Gw)
9
1(R)
2(S)
3(T) 19(Eu) 7(B)
17(Ev ) 4(U)
15(Ew) 5(V)
6(W)
14(Gb) 23(N) 24(N1)
13(Gx)
12(Gy )
11(Gz) 10(En)


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