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| APT60GT60BR 600V 116A Thunderbolt IGBTTM TO-247 The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25C unless otherwise specified. Collector-Gate Voltage (RGE = 20K) Emitter-Collector Voltage Gate-Emitter Voltage JE SP CT EC IVE IF T IC EC AT H IO NI N CA 1 L 600 600 15 20 116 60 220 120 65 500 300 TYP APT60GT60BR UNIT Volts Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 105C Pulsed Collector Current @ TC = 25C Amps Pulsed Collector Current 1 @ TC = 105C 2 Single Pulse Avalanche Energy Total Power Dissipation mJ Watts C Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions MIN MAX UNIT Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) 600 -15 3 4 5 2.5 2.8 80 2000 100 Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) B I CES O Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C) A nA 052-6223 Rev - I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60GT60BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V I C = I C2 MIN TYP MAX UNIT 3200 310 pF Gate-Emitter Charge JE SP CT EC IVE IF T IC EC AT H IO NI N CA VCC = 0.5VCES L 280 120 20 14 55 nC ns 180 Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10 Turn-off Delay Time Fall Time 190 140 25 75 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 ns 300 95 Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 1.9 2.4 4.3 25 75 TJ = +150C mJ Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 ns Turn-off Delay Time Fall Time 260 90 B Total Switching Losses TJ = +25C 3.8 mJ S THERMAL CHARACTERISTICS Symbol RJC RJA Torque 1 2 3 O Forward Transconductance VCE = 20V, I C = I C2 6 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw MIN TYP MAX UNIT C/W lb*in 0.25 40 10 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25, L = 100H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6223 Rev - |
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