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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 1/4 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features * High Power: 850mW * High Current: 1A Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 850 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ...................................................................................... 100 V VCEO Collector to Emitter Voltage ................................................................................... 100 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current (Continue) ............................................................................................ 1 A IC Collector Current (Pulse).................................................................................................. 2 A Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 100 5 80 50 20 50 Typ. Max. 100 350 300 20 Unit V V V nA mV Test Conditions IC=100uA IC=1mA IE=10uA VCB=80V IB=35mA, IC=350mA VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=1V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test : Pulse Width 380us, Duty Cycle2% MHz pF Classification Of hFE2 Rank Range A 50-115 B 95-300 H2N6718L HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 2/4 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 hFE 100 10 VCE(sat) @ IC=10IB hFE @ VCE=1V hFE @ VCE=5V 10 0.1 1 10 hFE @ VCE=2V hFE@VCE=10V 1 100 1000 10000 0.1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 100 Collector Output Capacitance Saturation Voltage (mV) 1000 Capacitance (pF) 10 VBE(sat) @ IC=10IB Cob 100 1 10 100 1000 10000 1 0.1 1 10 100 Collector Current-IC (mA) Collector Base Voltage (V) Safe Operating Area 10 1000 Cutoff Frequency & Collector Current fT @ VCE=10V 1 0.1 1mS 0.01 1 100mS 1S 100 10 100 1 10 100 Forward Voltage-VCE (V) Cutoff Frequency (MHz) Collector Current-IC (A) Collector Current-IC (mA) H2N6718L HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 3/4 Power Derating 900 800 PD(mW), Power Dissipation 700 600 500 400 300 200 100 0 0 50 o 100 150 200 Ta( C), Ambient Temperature H2N6718L HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 4/4 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Emitter 2.Collector 3.Base 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 H2N6718L HSMC Product Specification |
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