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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3059
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3059 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3059 PACKAGE Isolated TO-220
FEATURES
* Low on-state resistance RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 20 m MAX. (VGS = 4.0 V, ID = 25 A) * Low Ciss: Ciss = 2400 pF TYP. * Built-in gate protection diode * Isolated TO-220 package (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 20 +20, -10 50 200 30 2.0 150 -55 to +150 25 62.5
V V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13098EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999,2001
2SK3059
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 25 A VGS = 10 V, ID = 25 A VGS = 4.0 V, ID = 25 A VDS = 10 V VGS = 0 V f = 1 MHz ID = 25 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 50 A VDD = 48 V VGS = 10 V IF = 50 A, VGS = 0 V IF = 50 A, VGS = 0 V di/dt = 100 A / s 1.0 15 1.5 45 11 16 2400 700 280 30 420 140 380 50 7.5 17 1.0 55 75 13 20 MIN. TYP. MAX. 10 10 2.0 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS(on)
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
= 1 s Duty Cycle 1%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13098EJ3V0DS
2SK3059
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
PT - Total Power Dissipation - W
100 80 60 40 20
60 50 40 30 20 10 0 25 50 75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - C
TC - Case Temperature - C
5
1000
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
PW
10 0 s
ID - Drain Current - A
100
RD
o S( n)
Lim
i
ted
=1
0
s
ID(DC)
10
10
Po Lim wer DC ite Dis d sip a
0m s s
10
m
1m
s
tio
n
1 TC = 25C Single Pulse 1 10 100
0.1 0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A)= 62.5C/W
10 Rth(ch-C)= 4.17C/W 1
0.1
0.01 TC= 25C/W Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D13098EJ3V0DS
3
2SK3059
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 250
ID - Drain Current - A
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS 100
10
TA = 125C 75C 25C -25C
200 150 100 50 VGS = 10 V
1
VGS = 4.0 V
0.1 Pulsed VDS = 10 V 4 5
0
1
2
3
0
0.5
1.0
1.5
2.0
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed
100 Tch = -25C 25C 75C 125C
10
40
1
20 ID = 25 A
0.1 0.1
VDS = 10 V Pulsed 1.0 10 100
0
5
10
15
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 75 Pulsed
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
VDS = 10 V ID = 1 mA
1.5
50
1.0
25 VGS = 4.0 V VGS = 10 V 0 0.1 1 10 100 1000
0.5
0
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D13098EJ3V0DS
2SK3059
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000
ISD - Diode Forward Current - A
Pulsed VGS = 10 V
40
100 10
30
VGS = 4.0 V
20
VGS = 0 V 1
10 V
10 ID = 25 A -50 0 50 100 150
0.1 00.1 0
0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS
VDD = 30 V VGS = 10 V RG = 10
Ciss Coss 1000 Crss
VGS = 0 V f = 1 MHz
10000
tr 1000 tf td(off) td(on)
100
100
10 0.1 1 10 100
10 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
60 VDD = 48 V 30 V 12 V
VGS
12 10 8 6
100
40
10
20 VDS
4 2 0 40 60 80
1 0.1
1
10
100
0
20
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D13098EJ3V0DS
VGS - Gate to Source Voltage - V
di/dt = 100 A /s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 50 A 14
5
2SK3059
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000
IAS - Single Avalanche Current - A
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 80 60 40 20
VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 22.5 A
100 IAS = 25 A
EAS =6
10 RG = 25 VDD = 30 V VGS = 20 V 0 V 100
2.5
mJ
1 10
1m
10 m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13098EJ3V0DS
2SK3059
PACKAGE DRAWING (Unit : mm)
Isolated TO-220AB (MP-45F)
EQUIVALENT CIRCUIT
10.00.3
3.20.2
4.50.2 2.70.2
Drain
15.00.3
30.1
12.00.2
Gate
Body Diode
40.2
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
13.5 MIN.
Gate Protection Diode
Source
2.50.1 0.650.1 1.Gate 2.Drain 3.Source
123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D13098EJ3V0DS
7
2SK3059
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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