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| BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 ... 8.0 V Type BB 112 Marking - Ordering Code Pin Configuration Q62702-B240 Package1) TO-92 Maximum Ratings Parameter Reverse voltage Forward current, TA 60 C Operating temperature range Symbol VR IF Top Values 12 50 - 55 ... + 85 Unit V mA C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 112 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance VR = 1 V, f = 0.5 MHz Q factor VR = 1 V, f = 0.5 MHz Temperature coefficient of diode capacitance VR = 1 V, f = 1 MHz Capacitance matching VR = 1 ... 8 V Symbol min. IR - - CT 440 17.5 CT1 CT8 rs Q TCC 15 - - - 470 - - 1.4 480 500 520 34 - - - - - - ppm/K - - 50 200 pF Values typ. max. nA Unit CT - - 3 % C T Semiconductor Group 2 BB 112 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3 |
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