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| BC 807 / BC 808 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 310 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Coll. current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open B shorted E open C open - VCE0 - VCES - VCB0 - VEB0 Ptot - IC - ICM - IBM IEM Tj TS Grenzwerte (TA = 25/C) BC 807 45 V 50 V 50 V 5V 310 mW 1) 800 mA 1000 mA 200 mA 1000 mA 150/C - 65...+ 150/C BC 808 25 V 30 V 30 V Characteristics, Tj = 25/C Min. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA - VCE = 1 V, - IC = 100 mA BC807 BC808 Group -16 Group -25 Group -40 hFE hFE hFE hFE hFE 100 40 100 160 250 Kennwerte, Tj = 25/C Typ. - - 160 250 400 Max. 600 - 250 400 600 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 2 General Purpose Transistors Characteristics, Tj = 25/C Min. Collector saturation voltage - Kollektor-Sattigungsspg. - IC = 500 mA, - IB = 50 mA - IC = 500 mA, - IB = 50 mA Base-Emitter voltage - Basis-Emitter-Spannung - VCE = 1 V, - IC = 500 mA IE = 0, - VCB = 20 V IE = 0, - VCB = 20 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 4 V Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ fT CCB0 80 MHz - RthA - IEB0 - - VBE - ICB0 - ICB0 - - - - VCEsat - VBEsat - - BC 807 / BC 808 Kennwerte, Tj = 25/C Typ. - - - - - - 100 MHz 12 pF Max. 0.7 V 1.3 V 1.2 V 100 nA 5 :A 100 nA - - 320 K/W 1) BC 817 / BC 818 BC 807-40 = 5C BC 808-40 = 5G Base saturation voltage - Basis-Sattigungsspannung Collector-Base cutoff current - Kollektorreststrom Collector-Base Capacitance - Kollektor-Basis-Kapazitat BC 807-16 = 5A BC 807-25 = 5B BC 807 = 5D BC 808-16 = 5E BC 808 = 5H BC 808-25 = 5F ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 3 |
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