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| FDW2510NZ April 2004 FDW2510NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features * 6.4 A, 20 V RDS(ON) = 24 m @ VGS = 4.5 V RDS(ON) = 32 m @ VGS = 2.5 V * Extended VGSS range (12V) for battery applications * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Li-Ion Battery Pack G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 12 (Note 1a) Units V V A W C 6.4 30 1.6 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 C/W C/W Package Marking and Ordering Information Device Marking 2510NZ Device FDW2510NZ Reel Size 13'' Tape width 12mm Quantity 3000 units (c)2004 Fairchild Semiconductor Corporation FDW2510NZ Rev C(W) FDW2510NZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V 15 1 10 mV/C A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 6.4 A VGS = 4V, ID = 6.1 A VGS = 3.1 V, ID = 5.8 A VGS = 2.5 V, ID = 5.6 A VGS = 4.5 V, ID = 6.4 A, TJ=125C VDS = 5 V, ID = 6.4 A 0.6 0.98 -0.4 18 19 21 25 26 28 1.5 V mV/C 24 25 28 32 37 m gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 870 225 125 pF pF pF f = 1.0 MHz 1.9 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 9 13 18 9 18 23 33 18 12 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 6.4 A, 8.2 1.8 2.3 FDW2510NZ Rev C(W) FDW2510NZ Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 1.3 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage Diode Reverse Recovery Time IF = 6.4 A diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 18 1.2 (Note 2) 6 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) b) RJA is 77C/W (steady state) when mounted on a 1 inch copper pad on FR-4. RJA is 114 C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate over voltage rating is implied. FDW2510NZ Rev C(W) FDW2510NZ Typical Characteristics 30 3.0V 4.5V 3.5V 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = 10.0V 25 ID, DRAIN CURRENT (A) 2.5V 1.8 VGS = 2.0V 1.6 15 2.0V 10 1.4 2.5V 3.0V 3.5V 4.0V 4.5V 6.0V 10.0V 1.2 5 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 1 0.8 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.4A VGS = 4.5V 1.4 ID = 3.2A RDS(ON), ON-RESISTANCE (OHM) 0.06 0.05 1.2 0.04 1 TA = 125 C 0.03 o 0.8 0.02 TA = 25 C o 0.6 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.01 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 20 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) VGS = 0V 10 1 TA = 125oC 25oC -55 C o 12 0.1 8 TA = 125oC 4 25o -55 C 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 o 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2510NZ Rev C(W) FDW2510NZ Typical Characteristics 5 ID = 6.4A VDS = 5V 10V 1200 f = 1MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) 4 CAPACITANCE (pF) 15V 1000 Ciss 800 3 600 2 400 Coss 200 1 Crss 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 10ms 100ms 1s 1ms 40 SINGLE PULSE RJA = 114C/W TA = 25C 30 1 10s DC VGS = 4.5V SINGLE PULSE RJA = 114oC/W TA = 25 C o 20 0.1 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA =114 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2510NZ Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
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