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| PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuits MPSA92 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -300 -300 -5 -500 680 -55 to +175 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -300 -300 -5 -0.25 -0.1 -0.5 -0.9 25 40 25 50 6 MHz pF TYP. MAX. UNIT V V V A A CONDITIONS. IC=-100A, IE=0 IC=-1mA, IB=0* IE=-10A, IC=0 VCB=-200V, IE=0 VEB=-3V, IE=0 IC=-20mA, IB=-2mA* IC=-20mA, IB=-2mA* IC=-1mA, VCE=10V* IC=-10mA, VCE=10V* IC=-30mA,VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-84 MPSA92 TYPICAL CHARACTERISTICS hFE Static Forward Current Transfer Ratio 60 fT Transition Frequency (MHz) 170 150 130 110 90 70 50 30 0.1 1.0 10 100 VCE=20V VCE=10V 50 40 0.1 1.0 10 100 IC-Collector Current (mA) IC-Collector Current (mA) hFE vs IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) fT vs IC 3.0 1A Single Pulse Test at Tamb=25C 10ms IC-Collector Current Amps 100ms 0.1 1ms 2.0 IC / IB=10 D.C. 0.01 1.0 0 1.0 10 100 0.001 1 10 100 1000 IC-Collector Current (mA) VCE-Collector-Emitter Voltage (Volts) VCE(sat) vs IC Safe operating area 3-85 |
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